Through silicon via stacked structure and a method of manufacturing the same
A through silicon via (TSV) stacked structure made of stacked substrates. Each substrate includes multiple tapered through silicon vias, wherein the wider end of each tapered through silicon via is provided with a recessed portion and the narrower end of each tapered through silicon via protrudes from the substrate. The substrates are stacked one after another with the narrower end of each tapered through silicon via being fitting and jointing into a corresponding recessed portion of the tapered through silicon via.
1. A through silicon via stacked structure, comprising a plurality of stacked substrates, wherein each said substrate comprises:
at least one tapered through silicon via penetrating through said substrate;
a dielectric layer between each said through silicon via and said substrate, surrounding said through silicon via, wherein a wider end of said tapered through silicon via comprises a recessed portion exposing from an active surface of said substrate, and wherein a narrower end of said tapered through silicon via protrudes from a passive surface of said substrate that is opposite to the active surface;
a bump of conductive material encapsulating said narrower end of said tapered through silicon via, wherein said bump of conductive material is in direct contact with said dielectric layer; and
a material film covering at least a portion of said passive surface of said substrate and being in direct contact with said bump of conductive material;
wherein said plurality of substrates are stacked one after another with said narrower end of each said tapered through silicon via of one said substrate jointing into a corresponding said recessed portion of said tapered through silicon via of another said substrate.
2. The through silicon via stacked structure according to claim 1 , further comprising a conductive material filling up the void between each said jointed recessed portion and said narrower end.
3. The through silicon via stacked structure according to claim 1 , further comprising a non-conductive film between each pair of adjacent said stacked substrates.
4. The through silicon via stacked structure according to claim 1 , further comprising a passivation layer disposed between each pair of adjacent said stack substrates.
5. The through silicon via stacked structure according to claim 1 , wherein said recessed portion has a tapered shape.
6. The through silicon via stacked structure according to claim 1 , wherein said material film is a non-conductive film.
7. The through silicon via stacked structure according to claim 1 , wherein said material film is an anisotropic conductive film.