Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages

1. A method comprising;

forming a cavity in a carrier material, wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer;

attaching a die in the cavity, wherein a backside of the die comprises a die backside film (“DBF”);

forming Package-on-Package (“PoP”) lands on the bottom layer of the carrier material adjacent the die;

forming a dielectric material adjacent the die and on the carrier material bottom layer;

forming a coreless substrate by building up layers on the dielectric material; and

removing the carrier material top and bottom layers and etch stop layer from the coreless substrate.

2. The method of claim 1 further comprising wherein the DBF remains on the die.

3. The method of claim 1 further comprising wherein the DBF comprises an electromagnetic interference (“EMI”) shield.

4. The method of claim 1 further comprising wherein the DBF comprises an adhesive, and wherein the adhesive attaches to the bottom carrier layer.

5. The method of claim 1 further comprising removing the carrier material and etch stop layer while they are disposed on the coreless substrate.

6. The method of claim 1 further comprising wherein the DBF comprises metal fillers.

7. The method of claim 6 further comprising wherein the metal fillers comprise at least one of copper and silver, and comprise a particle size of less than about 10 microns.

8. The method of claim 1 further comprising wherein the coreless substrate comprises a portion of a coreless, bumpless, build up layer package.

9. A method comprising;

forming a cavity in a carrier material;

attaching a die in the cavity, wherein a backside of the die comprises a metal filled die backside film (“DBF”);

forming Package-on-Package (“PoP”) land structures on the bottom layer of the carrier material adjacent the die;

forming a dielectric material adjacent the die and on a bottom side of the carrier material;

forming a coreless substrate by building up layers on the dielectric material, wherein vias are formed to connect with the PoP land structures; and

removing the carrier material from the coreless substrate.

10. The method of claim 9 further comprising wherein the carrier material comprises a top layer and a bottom layer separated by an etch stop layer.

11. The method of claim 9 further comprising wherein the DBF remains attached to the coreless substrate.

12. The method of claim 9 wherein the coreless substrate comprises a portion of a coreless, bumpless, build up layer package.

13. The method of claim 10 further comprising wherein a top surface of the PoP land structure is coplanar with a top surface of the coreless bumpless buildup package.