IP Library › Patent Application 13660293
Patent Application
App. No. 13/660,293

Metal Oxide Semiconductor Films, Structures, and Methods

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Patent No.
US None
App. No.
13/660,293
Abstract

Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn 1-x Be x O, can be varied to increase the energy band gap of ZnO to values larger than that of ZnO. The atomic fraction y of Cd and the atomic fraction z of Se in the ZnCdOSe alloy system, namely, Zn 1-y Cd y O 1-z Se z , can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped, or p-type or n-type doped, by use of selected dopant elements.

Claims (64)

1 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

2 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

3 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials that are undoped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

4 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials that are undoped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of Be or Zn is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

5 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

6 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials that are p-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

7 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials that are n-type doped, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

8 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials that are n-type doped, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and

wherein the semiconductor material or structure comprises a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or structures.

9 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, comprising a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or devices, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein dopant for the p-type zinc oxide semiconductor alloy materials is at least one element selected from Group 1, 11, 5, and 15 elements.

10 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials that are p-type doped, comprising a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or devices, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and

wherein dopant for the p-type zinc oxide semiconductor alloy materials is at least one element selected from Group 1, 11, 5, and 15 elements.

11 . A semiconductor material or structure, comprising:

ZnBeO or ZnCdOSe semiconductor alloy materials that are p-type doped, comprising a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or devices, with energy band gap values between approximately 1.75 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn, Be, Cd or Se is selected to attain the energy band gap values, and

wherein dopant for the p-type ZnBeO or ZnCdOSe semiconductor alloy materials is at least one element selected from the group consisting of arsenic, phosphorus, antimony and nitrogen.

12 . A semiconductor material or structure, comprising:

ZnBeO semiconductor alloy materials that are p-type doped, comprising a crystalline layer having a crystal quality sufficiently high to fabricate semiconductor materials or devices, with energy band gap values between approximately 3.3 eV and approximately 10.6 eV,

wherein selected energy band gap values are attained by selecting alloy composition,

wherein a selected atomic fraction of any of Zn or Be is selected to attain the energy band gap values, and

wherein dopant for the p-type ZnBeO semiconductor alloy materials is at least one element selected from the group consisting of arsenic, phosphorus, antimony and nitrogen.

13 . The semiconductor material or structure of claim 1 , wherein the semiconductor material or structure is produced by a hybrid beam deposition process.

14 . The semiconductor material or structure of claim 2 , wherein the semiconductor material or structure is produced by a hybrid beam deposition process.

15 . The semiconductor material or structure of claim 3 , wherein the semiconductor material or structure is produced by a hybrid beam deposition process.

16 . The semiconductor material or structure of claim 4 , wherein the semiconductor material or structure is produced by a hybrid beam deposition process.