Semiconductor device
A semiconductor device includes a MIS transistor. The MIS transistor includes an active region surrounded by an isolation region in a semiconductor substrate, a gate insulating film formed on the active region and the isolation region, and having a high dielectric constant film, and a gate electrode formed on the gate insulating film. A nitrided region is formed in at least part of a portion of the gate insulating film that is located on the isolation region. A concentration of nitrogen contained in the nitrided region is nx, and a concentration of nitrogen contained in a portion of the gate insulating film that is located on the active region is n, wherein a relationship of nx>n is satisfied.
1. A semiconductor device, comprising:
a MIS transistor, wherein the MIS transistor includes:
an active region surrounded by an isolation region in a semiconductor substrate,
a gate insulating film formed on the active region and the isolation region, and having a high dielectric constant film, and
a gate electrode formed on the gate insulating film,
a nitrided region is formed in at least part of a portion of the gate insulating film that is located on the isolation region,
a concentration of nitrogen contained in the nitrided region is nx, and
a concentration of nitrogen contained in a portion of the gate insulating film that is located on the active region is n,
wherein a relationship of
nx>n
is satisfied, and
the nitrided region is not formed in the portion of the gate insulating film that is located on the active region.
2. The semiconductor device of claim 1 , wherein
the nitrided region includes a first nitrided region formed at one end of the gate insulating film in a gate width direction, and a second nitrided region formed at the other end of the gate insulating film in the gate width direction,
a width of the first nitrided region in the gate width direction is w1,
a width of the second nitrided region in the gate width direction is w2,
a protrusion amount from one end of the active region in the gate width direction to one end of the gate insulating film in the gate width direction is d1, and
a protrusion amount from the other end of the active region in the gate width direction to the other end of the gate insulating film in the gate width direction is d2, wherein
a relationship of
w1≦d1 and w2≦d2
is satisfied.
3. The semiconductor device of claim 1 , wherein nitrogen concentrations of portions of the isolation region that are located laterally outside the gate electrode in the gate width direction are higher than a nitrogen concentration of a portion of the isolation region that is located below the gate electrode.
4. The semiconductor device of claim 1 , wherein nitrogen concentrations of portions of the isolation region that are located laterally outside the gate electrode in the gate width direction are higher than nitrogen concentrations of portions of the isolation region that are located laterally outside the active region in a gate length direction.
5. The semiconductor device of claim 1 , wherein the nitrogen concentration nx is 2×10 22 atoms/cm 3 or higher.
6. The semiconductor device of claim 1 , wherein the nitrogen concentration n is 1×10 22 atoms/cm 3 or lower.
7. The semiconductor device of claim 1 , wherein the MIS transistor is an n-type MIS transistor.
8. The semiconductor device of claim 1 , wherein the gate insulating film contains a metal for adjustment.
9. The semiconductor device of claim 8 , wherein the metal for adjustment is lanthanum.
10. The semiconductor device of claim 1 , wherein the gate electrode includes a metal film formed on the gate insulating film, and a silicon film formed on the metal film.
11. The semiconductor device of claim 10 , wherein a nitrogen concentration of a portion of the metal film that is located above the isolation region is higher than a nitrogen concentration of a portion of the metal film that is located above the active region.