Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
1. A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps:
(1) providing an n-type semiconductor substrate,
(2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate,
(3) firing the dried aluminum paste, and
(4) removing the fired aluminum paste with water,
wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition, wherein the firing of step (3) is carried out in a belt furnace for a period of 1 to 5 minutes with the wafer reaching a peak temperature in the range of 700 to 900° C.
2. The process of claim 1 , wherein the n-type semiconductor substrate is selected from the group consisting of semiconductor substrates of n-doped crystalline germanium, semiconductor substrates of n-doped crystalline germanium-silicon alloy and semiconductor substrates of n-doped crystalline silicon.
3. The process of claim 1 , wherein the n-type semiconductor substrate is an n-type solar cell wafer, wherein the at least one surface area of the n-type semiconductor substrate is/are one or more surface areas of the n-type solar cell wafer, and wherein the one or more surface areas of the n-type solar cell wafer is that/are those to be provided with a p-type emitter.
4. The process of claim 3 , wherein the n-type solar cell wafer is selected from the group consisting of n-type crystalline germanium solar cell wafers, n-type crystalline germanium-silicon alloy solar cell wafers and n-type crystalline silicon solar cell wafers.
5. The process of claim 1 , wherein the particulate aluminum is present in the aluminum paste in a proportion of 50 to 80 wt. %, based on total aluminum paste composition.
6. The process of claim 1 , wherein the glass frit is an aluminosilicate glass or a borosilicate glass.
7. The process of claim 1 , wherein the organic vehicle content in the aluminum paste is 20 to 45 wt. %, based on total aluminum paste composition.
8. An n-type semiconductor substrate having at least one aluminum p-doped surface region made by the process of claim 1 , wherein the aluminum p-doped surface region penetrates the surface in the respective area only to a certain penetration depth in the range of, 500 to 4000 nm, in particular, 3000 to 4000 nm, forming the aluminum p-doped surface region in the respective area, wherein the aluminum p-doped region does not penetrated throughout the entire semiconductor substrate.
9. The process of claim 3 , wherein the particulate aluminum is present in the aluminum paste in a proportion of 50 to 80 wt. %, based on total aluminum paste composition.
10. The process of claim 3 , wherein the glass frit is an aluminosilicate glass or a borosilicate glass.
11. The process of claim 3 , wherein the organic vehicle content in the aluminum paste is 20 to 45 wt. %, based on total aluminum paste composition.
12. An n-type solar cell wafer having one or more p-type emitters made by the process of claim 3 .