Plasmon lasers at deep subwavelength scale
Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.
1. A plasmon laser source, comprising:
a metal substrate;
a semiconductor material;
the semiconductor material being separated from a surface of the metal substrate by a low-refraction index gap; and
an electron pumping means;
wherein the electron pumping means is configured to excite an electron carrier population to generate a plasmonic laser emission from the low-refraction index gap;
wherein the plasmonic laser emission is confined by a plasmonic mode having a mode size smaller than a diffraction limit of light in at least one dimension.
2. A laser source as recited in claim 1 , wherein at least a portion of the electron carrier population travel from the metal substrate through the low-refraction index gap to the semiconductor material.
3. A laser source as recited in claim 1 , wherein the laser source supports a plasmonic mode having a mode size smaller than λ/2 in at least one dimension of the mode.
4. A laser source as recited in claim 3 , wherein the laser source supports a plasmonic mode having a mode size smaller than λ/20 in at least one dimension of the mode.
5. A laser source as recited in claim 1 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 1 nm and approximately 100 nm.
6. A laser source as recited in claim 5 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 2 nm and approximately 50 nm.
7. A laser source as recited in claim 6 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 5 nm and approximately 10 nm.
8. A laser source as recited in claim 6 , the laser source generates a plasmonic mode emission having a mode size confined to be smaller than 10 nm in at least one dimension.
9. A laser source as recited in claim 1 , wherein the low-refraction index gap has an index of refraction between 1 and 2.
10. A laser source as recited in claim 9 , wherein the semiconductor material has an index of refraction between 2.5 and 3.5.
11. A laser source as recited in claim 1 , wherein the semiconductor material comprises a gain medium for amplifying light.
12. A laser source as recited in claim 1 , further comprising:
a positive charge carrier layer disposed over at least a portion of the semiconductor material opposite from said low-refraction index gap;
wherein the positive charge carrier is configured to allow hole electrons to travel through the positive charge carrier layer to the semiconductor material.
13. A laser source as recited in claim 1 , further comprising:
an electrode coupled to said hole injection layer;
wherein the electron pumping means comprises an electronic voltage source configured to apply an electrical bias across the electrode and the metal substrate.
14. A laser source as recited in claim 1 , wherein the semiconductor material comprises a nanowire having a first dimension less than 150 nm.
15. A laser source as recited in claim 1 :
wherein the semiconductor comprises a doped semiconductor,
wherein the electron pumping means comprises an electronic voltage source configured to apply an electrical bias across the doped semiconductor and the metal substrate;
the laser source comprising an MOS junction;
wherein the electrical bias is configured to generate an electron carrier inversion by biasing the MOS junction.
16. A laser source as recited in claim 1 , wherein said laser source operates at room temperature.
17. A laser source as recited in claim 1 , wherein said semiconductor gain material is configured to be selected from a plurality of different semiconductor materials to determine the wavelength of the plasmonic laser emission.
18. A laser source as recited in claim 1 , wherein the said semiconductor gain material is comprises a planar structure configured to confine plasmonic laser emission in only one dimension.
19. A laser source as recited in claim 18 , wherein said planar structure is sized to confine plasmonic laser emission in three dimensions.
20. A laser source as recited in claim 1 , wherein said laser source has a loss, in loss/wavelength units, of between 0.0001-0.1.
21. A laser source as recited in claim 1 , wherein the laser source is configured to support modulation speeds faster than 40 GHz.
22. A laser source as recited in claim 1 , wherein the laser source is configured to support modulation speeds faster than 1 THz.
23. A method for generating a plasmonic laser emission, the plasmonic laser emission having a mode size smaller than the diffraction limit of light, the method comprising the steps of:
generating an electrical bias across a metal substrate and a semiconductor material;
the semiconductor material being separated from a surface of the metal substrate by a low-refraction index gap;
exciting an electron carrier population within the semiconductor material; and
generating the plasmonic emission from the low-refraction index gap.
24. A method as recited in claim 23 , wherein the plasmonic mode has a mode size smaller than λ/2 in at least one dimension of the mode.
25. A method as recited in claim 24 , wherein the plasmonic mode has a mode size smaller than λ/20 in at least one dimension of the mode.
26. A method as recited in claim 23 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 1 nm and approximately 100 nm.
27. A method as recited in claim 26 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 2 nm and approximately 50 nm.
28. A method as recited in claim 27 , wherein the low-refraction index gap comprises a layer of material having a thickness that ranges between approximately 5 nm and approximately 10 nm.
29. A method as recited in claim 23 , wherein the electrical bias causes at least a portion of the electron carrier population to travel from the metal substrate through the low-refraction index gap to the semiconductor material.