Wavelength conversion sheet filled with large amount of phosphor, method of producing light emitting semiconductor device using the sheet, and light emitting semiconductor device
A wavelength conversion sheet filled with a large amount of phosphor, enabling the phosphor to be easily dispersed uniformly and in a large amount near the surface of an LED element. Specifically, the sheet includes: a layer formed from a heat-curable resin composition, which contains 100 parts by mass of a resin component and 100 to 2,000 parts by mass of a particulate phosphor in which the proportion of particles having a sphericity of 0.7 to 1.0 is not less than 60% of all the particles, and which exists in a plastic solid or semisolid state in an uncured state at normal temperature, wherein the average particle diameter of the phosphor is not more than 60% of the thickness of the layer formed from the heat-curable resin composition, and the maximum particle diameter thereof is not more than 90% thereof.
1. A wavelength conversion sheet filled with a phosphor, the sheet comprising a layer formed from a heat-curable resin composition, which comprises 100 parts by mass of a resin component and 200 to 2,000 parts by mass of a particulate phosphor in which a proportion of particles having a sphericity of 0.7 to 1.0 is not less than 60% of all particles, and which exists in a plastic solid or semisolid state in an uncured state at normal temperature,
wherein:
an average particle diameter of the phosphor is not more than 60% of a thickness of the layer formed from the heat-curable resin composition; and
a maximum particle diameter of the phosphor is not more than 90% of the thickness of the layer formed from the heat-curable resin composition.
2. The wavelength conversion sheet according to claim 1 , wherein the heat-curable resin composition is a heat-curable silicone resin composition, a heat-curable epoxy resin composition, or a heat-curable silicone-epoxy hybrid resin composition.
3. The wavelength conversion sheet according to claim 2 , wherein the thickness of the layer formed from the heat-curable resin composition is 10 to 100 μm.
4. A method of producing a light emitting optical semiconductor device comprising a covered LED element, the method comprising disposing the wavelength conversion sheet of claim 3 on a surface of an LED element, and curing the sheet by heating, thereby covering the LED element with a phosphor-containing cured resin layer.
5. A light emitting optical semiconductor device comprising a covered LED element, obtained by the method of claim 4 .
6. A method of producing a light emitting optical semiconductor device comprising a covered LED element, the method comprising disposing the wavelength conversion sheet of claim 2 on a surface of an LED element, and curing the sheet by heating, thereby covering the LED element with a phosphor-containing cured resin layer.
7. A light emitting optical semiconductor device comprising a covered LED element, obtained by the method of claim 6 .
8. The wavelength conversion sheet according to claim 1 , wherein the thickness of the layer formed from the heat-curable resin composition is 10 to 100 μm.
9. A method of producing a light emitting optical semiconductor device comprising a covered LED element, the method comprising disposing the wavelength conversion sheet of claim 8 on a surface of an LED element, and curing the sheet by heating, thereby covering the LED element with a phosphor-containing cured resin layer.
10. A light emitting optical semiconductor device comprising a covered LED element, obtained by the method of claim 9 .
11. A method of producing a light emitting optical semiconductor device comprising a covered LED element, the method comprising disposing the wavelength conversion sheet of claim 1 on a surface of an LED element, and curing the sheet by heating, thereby covering the LED element with a phosphor-containing cured resin layer.
12. A light emitting optical semiconductor device comprising a covered LED element, obtained by the method of claim 11 .