Controlled fin-merging for fin type FET devices
View Patent ↗A placement of non-planar FET devices is disclosed, which includes non-planar devices that have electrodes, and the electrodes contain fins and an epitaxial layer which merges the fins together. The non-planar devices are so placed that their gate structures are in a parallel configuration separated from one another by a first distance, and the fins of differing non-planar devices line up in essentially straight lines. The electrodes of differing FET devices are separated from one another by a cut defined by opposing facets of the electrodes, with the opposing facets also defining the width of the cut. The width of the cut is smaller than one fifth of the first distance which separates the gate structures.
1. A placement of FET devices, comprising:
FET devices constructed over a principal surface of a support member, said FET devices comprising gate structures and electrodes adjoining said gate structures, wherein said electrodes comprise fins and an epitaxial layer which merges said fins together, furthermore said fins serve as device bodies underneath said gate structures, wherein said FET devices are so placed that said gate structures are in a parallel configuration separated from one another by a first distance, and that said fins of differing ones of said FET devices line up in essentially straight lines, wherein said electrodes of differing ones of said FET devices are separated from one another by a cut defined by opposing facets of said electrodes, wherein said opposing facets are essentially perpendicular to said principal surface and reach down to said principal surface, wherein said cut runs essentially in parallel with said gate structures, and wherein said opposing facets define a width for said cut, wherein said width is smaller than one fifth of said first distance that spaces said gate structures apart; and
wherein said FET devices are characterized as being non-planar devices.
2. The placement of FET devices of claim 1 , wherein said facets are characterized as being smooth, with any protrusion on said facets having an extension into said cut by less than 20% of said width.
3. The placement of FET devices of claim 1 , wherein said fins are of a silicon based material.
4. The placement of FET devices of claim 1 , wherein said non-planar devices are FinFET devices.
5. The placement of FET devices of claim 1 , wherein said non-planar devices are TriGate devices.