Top gate thin-film transistor, display device, and electronic apparatus
The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed.
1. A top gate type thin-film transistor formed on a transparent substrate, comprising:
a patterned light blocking film,
a base layer,
a patterned crystalline silicon film,
a gate insulating film, and
a patterned gate electrode film sequentially laminated on the transparent substrate,
wherein the patterned crystalline silicon film comprises:
a channel region overlapping the patterned gate electrode; and
two regions doped with an impurity at low concentration that are in contact with the channel region,
wherein the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration,
wherein the patterned light blocking film is arranged such that the light blocking film partially overlaps at least any one of a source region and a drain region,
wherein the patterned light blocking film comprises a third region that is not located right below the patterned crystalline silicon film, and
wherein the region on the drain side of the light blocking film and the region on the source side of the light blocking film that are divided across the channel region are electrically connected to each other via the third region of the light blocking film.
2. The thin-film transistor according to claim 1 , wherein
the transparent substrate is an insulative transparent substrate, the base layer is a layer made of a light transmissive and insulative material, and the patterned light blocking film is entirely surrounded by the transparent substrate and the base layer and electrically isolated.
3. A display device driven using a top gate type crystalline silicon thin-film transistor formed on a transparent substrate, wherein the top gate type crystalline silicon thin-film transistor, which is used as a driving device in the display device and formed on the transparent substrate, is the thin-film transistor according to claim 1 .
4. An electronic apparatus comprising a display device, wherein the display device employed in the electronic apparatus is the display device according to claim 3 .
5. A top gate type thin-film transistor formed on a transparent substrate, comprising:
a patterned light blocking film,
a base layer,
a patterned crystalline silicon film,
a gate insulating film, and
a patterned gate electrode film are sequentially laminated on the transparent substrate,
the patterned crystalline silicon film comprises:
a channel region overlapping the patterned gate electrode; and
two regions doped with an impurity at low concentration that are in contact with the channel region, and
the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration,
wherein
the patterned light blocking film comprises a third region that is not located right below the patterned crystalline silicon film, and
the region on the drain side of the light blocking film and the region on the source side of the light blocking film that are divided across the channel region are electrically connected to each other via the third region of the light blocking film.
6. The thin-film transistor according to claim 5 , wherein
the transparent substrate is an insulative transparent substrate,
the base layer is a layer made of a light transmissive and insulative material, and
the patterned light blocking film is entirely surrounded by the transparent substrate and the base layer and electrically isolated.
7. A display device driven using a top gate type crystalline silicon thin-film transistor formed on
a transparent substrate, wherein
the top gate type crystalline silicon thin-film transistor, which is used as a driving device in the display device and formed on the transparent substrate, is the thin-film transistor according to claim 5 .
8. An electronic apparatus comprising a display device, wherein
the display device employed in the electronic apparatus is the display device according to claim 7 .
9. A top gate type thin-film transistor formed on a transparent substrate, comprising:
a patterned light blocking film,
a base layer,
a patterned crystalline silicon film,
a gate insulating film, and
a patterned gate electrode film sequentially laminated on the transparent substrate,
wherein the patterned crystalline silicon film comprises:
a channel region overlapping the patterned gate electrode; and
two regions doped with an impurity at low concentration that are in contact with the channel region,
wherein the patterned light blocking film is arranged not to overlap the channel region and arranged such that the light blocking film partially overlaps at least any one of the two regions doped with an impurity at low concentration,
wherein the patterned light blocking film is arranged such that the light blocking film partially overlaps at least any one of a source region and a drain region, and
wherein the patterned light blocking film is electrically isolated from any one of drain bias, source bias, gate bias and ground that are applied for the top gate type thin-film transistor to operate.