Piezoelectric thin-film resonator and method for producing piezoelectric thin film
A piezoelectric thin-film resonator includes a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that the concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film; a first electrode; a second electrode facing the first electrode across the piezoelectric thin film; and a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes.
1. A piezoelectric thin-film resonator comprising:
a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that a concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film;
a first electrode;
a second electrode facing the first electrode across the piezoelectric thin film; and
a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes; wherein
the piezoelectric thin film is a multilayer film including a plurality of stacked layers having different Sc concentrations; and
the plurality of stacked layers include an Sc-free aluminum nitride layer and an Sc-containing aluminum nitride layer.
2. The piezoelectric thin-film resonator according to claim 1 , wherein the piezoelectric thin film includes side portions which are each in contact with a corresponding one of the first and second electrodes and an approximate center of the piezoelectric thin film in the thickness direction thereof has an Sc concentration higher than that of the side portions.
3. A piezoelectric thin-film resonator comprising:
a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that a concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film;
a first electrode;
a second electrode facing the first electrode across the piezoelectric thin film; and
a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes; wherein
the concentration of Sc in the piezoelectric thin film varies continuously in the thickness direction thereof; and
the piezoelectric thin film includes side portions which are each in contact with a corresponding one of the first and second electrodes and an approximate center of the piezoelectric thin film in the thickness direction thereof has an Sc concentration higher than that of the side portions.
4. The piezoelectric thin-film resonator according to claim 3 , wherein the first electrode defines a lower electrode, the second electrode defines an upper electrode, and the piezoelectric thin film includes a surface portion which is in contact with the upper electrode and which includes aluminum nitride containing no Sc.
5. The piezoelectric thin-film resonator according to claim 1 , wherein the piezoelectric thin film includes side portions which are each in contact with a corresponding one of the first and second electrodes and an approximate center of the piezoelectric thin film in the thickness direction thereof has an Sc concentration lower than that of the side portions.
6. A piezoelectric thin-film resonator comprising:
a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that a concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film;
a first electrode;
a second electrode facing the first electrode across the piezoelectric thin film; and
a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes; wherein
the concentration of Sc in the piezoelectric thin film varies continuously in the thickness direction thereof; and
the piezoelectric thin film includes side portions which are each in contact with a corresponding one of the first and second electrodes and an approximate center of the piezoelectric thin film in the thickness direction thereof has an Sc concentration lower than that of the side portions.
7. The piezoelectric thin-film resonator according to claim 1 , wherein one of the layers that is in contact with the first electrode and one of the layers that is in contact with the second electrode are Sc-containing aluminum nitride layers and one of the layers that is located at the approximate center of the piezoelectric thin film in the thickness direction thereof is an Sc-free aluminum nitride layer.
8. The piezoelectric thin-film resonator according to claim 1 , wherein the concentration of Sc in the piezoelectric thin film ranges from about 0.5 atomic percent to about 24 atomic percent.
9. The piezoelectric thin-film resonator according to claim 3 , wherein the concentration of Sc in the piezoelectric thin film ranges from about 0.5 atomic percent to about 24 atomic percent.
10. The piezoelectric thin-film resonator according to claim 6 , wherein the concentration of Sc in the piezoelectric thin film ranges from about 0.5 atomic percent to about 24 atomic percent.