Vertical topology light emitting device
View Patent ↗A vertical topology light emitting device comprises a conductive adhesion structure having a first surface and a second surface; a conductive support structure on the first surface; a reflective structure on the second surface, the reflective structure also serving as a first electrode; a semiconductor structure on the reflective structure; and a second electrode on the semiconductor structure.
1. A vertical topology light emitting device, comprising:
a conductive support structure comprising Cu;
a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au;
a second adhesion layer disposed on the first adhesion layer;
a first metal layer disposed on the second adhesion layer;
a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti;
a GaN-based semiconductor structure disposed on the second metal layer;
an inter-layer disposed on the GaN-based semiconductor structure; and
a metal contact disposed on the inter-layer,
wherein the first metal layer directly contacts the second metal layer, and
wherein the second metal layer directly contacts the GaN-based semiconductor structure.
2. The device according to claim 1 , wherein the metal contact comprises Au and Pt.
3. The device according to claim 1 , wherein the first adhesion layer directly contacts the second adhesion layer.
4. The device according to claim 1 , wherein the GaN-based semiconductor structure is less than 5 microns thick.
5. The device according to claim 1 , wherein the inter-layer is configured to enhance adhesion.
6. The device according to claim 1 , wherein metal contact has a diameter of about 100 microns.
7. The device according to claim 1 , wherein the second metal layer serves as an electrode.
8. The device according to claim 1 , wherein the first metal layer is configured to reflect light from the GaN-based semiconductor structure.
9. The device according to claim 8 , wherein the surface of the first metal layer is a dominant reflective surface.
10. The device according to claim 1 , wherein the first adhesion layer is thicker than the second adhesion layer.
11. The device according to claim 1 , further comprising a reflective p-type metal contact which contacts the GaN-based semiconductor structure.
12. The device according to claim 1 , wherein the first metal layer is thicker than the second metal layer.
13. A vertical topology light emitting device, comprising:
a conductive support structure comprising Cu;
a first adhesion layer disposed on the conductive support structure, the first adhesion layer comprising Au;
a second adhesion layer disposed on the first adhesion layer;
a first metal layer disposed on the second adhesion layer, the first metal layer consisting of Al;
a second metal layer disposed on a surface of the first metal layer, the second metal layer comprising Ti; and
a GaN-based semiconductor structure disposed over the first adhesion layer, wherein the second metal layer directly contacts the GaN-based semiconductor structure,
wherein the second metal layer serves as an n-type electrode to the GaN-based semiconductor structure.
14. The device according to claim 13 , wherein the first metal layer is configured to reflect light from the GaN-based semiconductor structure.
15. The device according to claim 14 , wherein the surface of the first metal layer is dominant reflective surface.
16. The device according to claim 13 , wherein the first adhesion layer is thicker than the second adhesion layer.
17. The device according to claim 13 , wherein the first metal layer is thicker than the second metal layer.
18. The device according to claim 13 , wherein the conductive support structure is less than about 100 microns thick.
19. The device according to claim 13 , wherein the first adhesion layer contacts the conductive support structure.
20. The device according to claim 13 , further comprising a transparent p-type metal contact which contacts the GaN-based semiconductor structure.