Method of forming semiconductor substrate
A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.
1. A method of forming a semiconductor substrate comprising:
providing a growth substrate including a buffer layer and a base substrate, wherein providing the growth substrate comprises forming the buffer layer overlying the base substrate;
forming a base layer of a Group 13-15 material on the growth substrate during a growth process at a growth temperature, wherein the buffer layer is between the base layer and the base substrate;
forming a mask comprising mask regions and gap regions overlying the base layer during the growth process, wherein:
the mask comprises a silicon containing material;
the mask regions have a random orientation and random sizes relative to each other; and
a majority of the gap regions have a width of not greater than 0.8 microns;
preferentially removing a portion of the base layer underlying the mask during the growth process and after forming the mask comprising the mask regions and gap regions, wherein preferentially removing a portion of the base layer is conducted until a portion of the buffer layer is exposed, and wherein the buffer layer is an etch-stop layer;
forming an epitaxial layer overlying the mask and the base layer, wherein the epitaxial layer comprises a Group 13-15 material; and
separating the base layer, mask, and epitaxial layer from the growth substrate during forming of at least one of the base layer, mask, and epitaxial layer, wherein separating comprises thermal decomposition of at least a portion of the buffer layer between the base substrate and the base layer.
2. The method of claim 1 , wherein the base substrate includes sapphire.
3. The method of claim 1 , wherein forming the base layer comprises hydride vapor phase epitaxy (HVPE).
4. The method of claim 1 , wherein the base layer comprises a nitride material.
5. The method of claim 1 , wherein forming the base layer is conducted at a rate of at least about 50 microns/hr.
6. The method of claim 1 , wherein forming the base layer comprises a spontaneous formation process comprising the formation of island features including a semiconductive material, and coalescence of the island features into a continuous layer of the semiconductive material.
7. The method of claim 1 , wherein the mask regions comprise silicon nitride (SiNx).
8. The method of claim 1 , wherein preferentially removing a portion of the base layer comprises etching.
9. The method of claim 1 , wherein preferentially removing a portion of the base layer comprises etching and is conducted within 200° C. of the growth temperature.
10. The method of claim 1 , wherein preferentially removing comprises anisotropic etching of a portion of an upper surface of the base layer having a higher concentration of defects as compared to a region of the upper surface having a lower concentration of defects.
11. A method of forming a semiconductor substrate comprising:
providing a growth substrate including a buffer layer and a base substrate, wherein providing the growth substrate comprises forming the buffer layer overlying the base substrate;
forming a base layer of a Group 13-15 material on a growth substrate overlying the buffer layer at a growth temperature;
forming a mask comprising a nitride material overlying the base layer, wherein the mask comprises mask regions and gap regions, mask regions having a random orientation and random sizes relative to each other and a majority of the gap regions having a width of not greater than 0.8 microns;
etching and preferentially removing portions of the base layer and the mask after forming the mask, wherein etching and preferentially removing portions of the base layer is conducting until a portion of the buffer layer is exposed, and the buffer layer is an etch-stop layer, wherein forming the base layer, forming the mask and etching and preferentially removing are conducted in-situ during a single operation within a growth chamber;
forming an epitaxial layer overlying the mask and the base layer, wherein the epitaxial layer comprises a Group 13-15 material; and
separating the base layer, mask, and epitaxial from the growth substrate during forming of at least one of the base layer, mask, and epitaxial layer, wherein separating comprises thermal decomposition of at least a portion of the buffer layer.
12. A method of forming a semiconductor substrate comprising:
forming a base layer at a base layer growth temperature comprising GaN on a growth substrate during a growth process, the growth substrate comprising:
a sapphire base substrate; and
a buffer layer overlying the sapphire base substrate and disposed between the base substrate and the base layer;
forming a mask comprising mask regions and gap regions between the mask regions overlying the base layer, wherein:
the mask regions have a random orientation and random sizes relative to each other;
a majority of the gap regions have a width of not greater than 0.8 microns; and
forming the mask comprising mask regions and gap regions is conducted within 200° C. of the growth temperature;
preferentially removing a portion of the base layer underlying the mask after forming the mask, wherein removing a portion of the base layer is conducted until a portion of the buffer layer is exposed, wherein the buffer layer is an etch-stop layer;
forming an epitaxial layer overlying the mask and the base layer, wherein the epitaxial layer comprises a Group 13-15 material; and
separating the base layer, mask, and epitaxial layer from the growth substrate during forming of at least one of the base layer, mask, and epitaxial layer, wherein separating comprises thermal decomposition of at least a portion of the buffer layer between the base substrate and the base layer.
13. The method of claim 1 , wherein forming the mask is conducted within 200° C. of the growth temperature.
14. The method of claim 1 , wherein preferentially removing a portion of the base layer is conducted within 200° C. of the growth temperature.
15. The method of claim 11 , wherein the mask comprises mask regions and gap regions overlying the base layer, the mask regions having a random orientation and random sizes relative to each other, and the gap regions having random sizes relative to each other.
16. The method of claim 15 , wherein each of the mask regions has a width of at least about 0.5 nm and not greater than 0.8 microns.
17. The method of claim 11 , wherein forming the mask is conducted within 200° C. of the growth temperature.
18. The method of claim 11 , wherein etching and removing a portion of the base layer is conducted within 200° C. of the growth temperature.
19. The method of claim 12 , wherein removing a portion of the base layer underlying the mask is conducted within 200° C. of the growth temperature.