Photovoltaic cell with nano-patterned substrate
A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.
1. A photovoltaic cell comprising:
an n-type semiconductor layer that is composed of an n-type semiconductor material;
a p-type semiconductor layer that is composed of a p-type semiconductor material; and
a buried mask layer substantially situated between the n-type semiconductor layer and the p-type semiconductor layer, wherein:
a plurality of nano-windows are defined in the buried mask layer, each said nano-window extending entirely through the buried mask layer;
one of said n-type or p-type semiconductor layer underlies the buried mask layer such that a substantially planar upper surface of said underlying n-type or p-type semiconductor layer is adjacent to the buried mask layer;
the other of said n-type or p-type semiconductor layer is a single, continuous semiconductor body that lies substantially over the buried mask layer, fills the plurality of nano-windows, and forms a respective interface with the substantially planar upper surface of the underlying semiconductor layer at each said nano-window; and
a plurality of heterojunctions is formed between the n-type semiconductor layer and the p-type semiconductor layer, each said heterojunction being formed at a respective one of said interfaces, wherein the p-type semiconductor layer has a pseudomorphic crystal structure.
2. The photovoltaic cell of claim 1 , wherein the p-type semiconductor is Cadmium Telluride, and wherein the n-type semiconductor material is Cadmium-Sulfide.
3. The photovoltaic cell of claim 1 , wherein the p-type semiconductor material is of the formula of Zn x Cd 1-x Te.
4. The photovoltaic cell of claim 1 having a graded band gap.
5. The photovoltaic cell of claim 1 , further comprising:
a transparent conducting film layer positioned immediately adjacent to the n-type semiconductor layer; and
a base substrate layer positioned immediately adjacent to the transparent conducting film layer such that the transparent conducting film layer is disposed between the base substrate layer and the n-type semiconductor layer.
6. The photovoltaic cell of claim 1 , wherein the buried mask layer is composed of Silicon Oxide or Silicon Nitride.
7. The photovoltaic cell of claim 1 , wherein the buried mask layer has a thickness of less than 450 nm.
8. The photovoltaic cell of claim 1 , wherein the n-type semiconductor layer has a thickness of less than 100 nm.
9. The photovoltaic cell of claim 1 , wherein each nano-window in the plurality of nano-windows has a length of less than 350 nm, a width of less than 350 nm, and a thickness of less than 450 nm.
10. The photovoltaic cell of claim 1 , wherein the plurality of nano-windows comprise the p-type semiconductor material.
11. A photovoltaic cell, comprising:
a glass base substrate layer;
a transparent conducting film layer comprising material of the formula ITO, the transparent conducting film layer located immediately adjacent to the glass base substrate layer;
an n-type semiconductor layer composed of Cadmium Sulfide located immediately adjacent to the transparent conducting film layer, wherein the transparent conducting film layer is between the glass base substrate layer and the n-type semiconductor layer and wherein the n-type semiconductor layer has a substantially planar upper surface opposite to the transparent conducting film layer;
a nano-patterned buried mask layer composed of one of Silicon Oxide or Silicon Nitride, the nano-patterned buried mask layer located immediately adjacent to the n-type semiconductor layer, wherein the n-type semiconductor layer is between the transparent conducting film layer and the nano-patterned buried mask layer, the nano-patterned buried mask layer comprising a plurality of nano-windows, each nano-window in the plurality of nano-windows having a length of less than 350 nm and a width of less than 350 nm; and
a p-type semiconductor layer composed of a p-type semiconductor material of the formula Zn x Cd 1-x Te located immediately adjacent to the nano-patterned buried mask layer, wherein the nano-patterned buried mask layer is between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer is a single, continuous semiconductor body and the material thereof extends through the plurality of nano-windows to form a plurality of heterojunctions with the n-type semiconductor material, wherein each said heterojunction is formed at an interface between p-type semiconductor material filling a respective one of the nano-windows and the substantially planar upper surface of the n-type semiconductor layer, wherein at least a portion of the p-type semiconductor material has a pseudomorphic crystal structure, and wherein the photovoltaic cell has a graded band gap.