SEMICONDUCTOR WAFER DICING METHOD
A method of producing semiconductor dies includes providing a semiconductor wafer having front and back faces and an array of integrated circuits fabricated on it. The integrated circuits having active faces at the front face of the wafer. Grooves are cut mechanically from the back face partially through the wafer along saw streets between the integrated circuits. The integrated circuits are then singulated by scanning a laser beam on the front face within and along the saw streets, which scribes the wafer from the front face, and then singulating the integrated circuits by mechanically cleaving the wafer along the saw streets.
1 . A method of separating semiconductor dies formed on a wafer, comprising:
providing a semiconductor wafer having front and back faces and an array of semiconductor dies fabricated therein, said semiconductor dies having active faces at said front face of said wafer;
mechanically cutting grooves from said wafer back face partially through said wafer along saw streets between said semiconductor dies; and
singulating said semiconductor dies, including scanning a laser beam on said wafer front face within and along said saw streets.
2 . The method of claim 1 , wherein scanning said laser beam scribes said wafer from said front face and singulating said semiconductor dies includes loading said wafer mechanically to cleave said wafer along said saw streets.
3 . The method of claim 2 , wherein singulating said semiconductor dies includes mounting said wafer with said back face attached to a back face adhesive support element after cutting said grooves.
4 . The method of claim 3 , wherein loading said wafer mechanically includes stretching said back face adhesive support element radially to apply a radial tensile stress to said back face.
5 . The method of claim 1 , wherein said wafer includes alignment marks on said front face, said alignment marks guiding said scanning of said laser beam.
6 . The method of claim 1 , wherein said laser beam alters the structure of said wafer over a width less than and included within the width of said grooves.
7 . The method of claim 1 , wherein said laser beam is pulsed and scans each of said saw streets in a plurality of scans focused at respective depths in said wafer.
8 . The method of claim 1 , further comprising back-grinding said wafer to produce said back face.
9 . The method of claim 1 , wherein cutting said grooves includes mounting said wafer with said front face attached to a front face support element and sawing partially through said wafer from said back face.
10 . The method of claim 9 , wherein said wafer includes alignment marks on said front face, said alignment marks being sensed through said front face support element and guiding said sawing partially through said wafer from said back face.
11 . The method of claim 10 , wherein said alignment marks on said front face guide said scanning of said laser beam.
12 . A method of producing semiconductor devices, comprising:
providing a semiconductor wafer having front and back faces and an array of semiconductor dies fabricated therein, said semiconductor dies having active faces at said front face of said wafer;
mechanically cutting grooves from said wafer back face partially through said wafer along saw streets between said semiconductor dies;
singulating said semiconductor dies, including scanning a laser beam on said wafer front face within and along said saw streets, wherein said singulated semiconductor dies have edges and said grooves form undercuts in said edges under said active faces, and said active faces have widths greater than said back faces;
providing die support members having support surfaces; and
attaching said back faces of said semiconductor dies to said support surfaces with a die attach material, wherein the die attach material flows into said undercut and a fillet is formed in said undercut.
13 . The method of claim 12 , wherein scanning said laser beam scribes said wafer from said front face and singulating said semiconductor dies includes loading said wafer mechanically to cleave said wafer along said saw streets.
14 . The method of claim 13 , wherein singulating said semiconductor dies includes mounting said wafer with said back face attached to a back face adhesive support element after cutting said grooves.
15 . The method of claim 14 , wherein loading said wafer mechanically includes stretching said back face adhesive support element radially to apply a radial tensile stress to said back face.
16 . The method of claim 12 , wherein said laser beam alters the structure of said wafer over a width less than and included within the width of said grooves.
17 . The method of claim 12 , wherein said laser beam is pulsed and scans each of said saw streets in a plurality of scans focused at respective depths in said wafer.
18 . The method of claim 12 , further comprising back-grinding said wafer to produce said back face.
19 . The method of claim 12 , wherein cutting said grooves includes mounting said wafer with said front face attached to a front face support element and sawing partially through said wafer from said back face.