CHEMICAL VAPOR DEPOSITION OR EPITAXIAL-LAYER GROWTH REACTOR AND SUPPORTER THEREOF
A chemical vapor deposition or epitaxial-layer growth reactor includes a reaction chamber. At least one substrate carrier and a supporter for supporting the substrate carrier are provided in the reaction chamber. The substrate carrier includes a first surface and a second surface. The second surface of the substrate carrier is provided with at least one recess concaved inwardly. The supporter includes: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part including a supporting surface; and a plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier, the plug-in part of the supporter being inserted detachably in the recess, so as to enable the substrate carrier to be placed on and supported by the supporter.
1 . A chemical vapor deposition or epitaxial-layer growth reactor, comprising a reaction chamber in which a substrate carrier and a supporter for supporting the substrate carrier are provided, wherein
the substrate carrier comprises a first surface and a second surface, the first surface is configured to place several substrates to be processed thereon; the second surface of the substrate carrier is provided with at least one recess concaved inwardly;
the supporter comprises: a spindle part; a supporting part connected to one end of the spindle part and extending outwardly from the periphery of the spindle part, the supporting part comprising a supporting surface; and at least one plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier; and
the at least one plug-in part of the supporter is inserted detachably into the at least one recess, so as to enable the substrate carrier to be placed on and supported by the supporter, and in a supporting case, the supporting surface of the supporting part at least partially contacts with at least a part of the second surface of the substrate carrier, so that the substrate carrier is supported by the supporting surface in contact with the substrate carrier.
2 . The reactor according to claim 1 , wherein the at least one plug-in part of the supporter is connected to the supporting part, and protrudes outwardly by a distance from the supporting surface to a position where the at least one plug-in part is allowed to be engaged with the at least one recess.
3 . The reactor according to claim 1 , wherein the at least one plug-in part of the supporter is connected to a position of the spindle part located below the supporting surface, and extends by a height towards the first surface of the substrate carrier to a position where the at least one plug-in part is allowed to be engaged with the at least one recess.
4 . The reactor according to claim 1 , wherein the at least one plug-in part of the supporter comprises a periphery, and the at least one recess of the substrate carrier comprises an internal circumferential wall; when the at least one plug-in part of the supporter is inserted into the at least one recess, there is a clearance between at least parts of the periphery and the internal circumferential wall, and the at least one plug-in part is located in the at least one recess at a position where at least a part of the periphery contacts with, is engaged with or abuts against at least a part of the internal circumferential wall.
5 . The reactor according to claim 1 , wherein the at least one plug-in part of the supporter comprises a first plug-in part and a second plug-in part spaced apart from each other or adjacent to each other.
6 . The reactor according to claim 5 , wherein the at least one recess comprises a first recess and a second recess; and wherein, when the at least one plug-in part of the supporter is inserted into the at least one recess, the first plug-in part is inserted into the first recess, and the second plug-in part is inserted into the second recess.
7 . The reactor according to claim 5 , wherein the at least one recess includes a single recess sized or shaped such that at least one of the first plug-in part and the second plug-in part is accommodated in the recess when the at least one plug-in part of the supporter is inserted in the at least one recess.
8 . The reactor according to claim 1 , wherein at least one key or positioning pin is provided on the at least one plug-in part of the supporter, and at least one groove matched with the at least one key or positioning pin is provided on a side wall of the at least one recess of the substrate carrier; and
wherein, when the at least one plug-in part of the supporter is inserted into the at least one recess, the at least one key or positioning pin is at least partially engaged with, contacts with or abuts against the at least one groove, so as to enable synchronous movement of the at least one plug-in part and the at least one recess.
9 . The reactor according to claim 1 , wherein the at least one recess comprises a first recess and a second recess distributed on the second surface of the substrate carrier, and spaced apart from each other by a distance or adjacent to each other.
10 . The reactor according to claim 1 , wherein several hollowed-out structures are provided in the supporting part of the supporter.
11 . The reactor according to claim 1 , wherein the spindle part of the supporter is connected to a rotary mechanism, so as to be rotated by the rotary mechanism, and the at least one plug-in part connected to the spindle part forces, pushes or drives the substrate carrier to rotate.
12 . A chemical vapor deposition or epitaxial-layer growth reactor, comprising a reaction chamber in which a substrate carrier and a supporter for supporting the substrate carrier are provided, wherein
the substrate carrier comprises a first surface and a second surface, the first surface is configured to place several substrates to be processed thereon; the second surface of the substrate carrier is provided with at least one recess concaved inwardly;
the supporter comprises: a spindle part comprising a top end, the top end comprising a supporting surface; and at least one plug-in part connected to the spindle part and extending by a height towards the first surface of the substrate carrier; and
the at least one plug-in part is inserted detachably into the at least one recess, so as to enable the substrate carrier to be placed on and supported by the supporter, and in a supporting case, the supporting surface at least partially contacts with at least a part of the second surface of the substrate carrier, so that the substrate carrier is supported by the supporting surface in contact with the substrate carrier.
13 . The reactor according to claim 12 , wherein the at least one plug-in part of the supporter is connected to the top end, and protrudes outwardly by a distance from the supporting surface to a position where the at least one plug-in part is allowed to be engaged with the at least one recess.
14 . The reactor according to claim 12 , wherein the at least one plug-in part of the supporter is connected to a position of the spindle part located below the supporting surface, and extends by a height towards the first surface of the substrate carrier to a position where the at least one plug-in part is allowed to be engaged with the at least one recess.
15 . The reactor according to claim 12 , wherein the at least one plug-in part of the supporter comprises a periphery, and the at least one recess of the substrate carrier comprises an internal circumferential wall; when the at least one plug-in part of the supporter is inserted into the at least one recess, there is a clearance between at least parts of the periphery and the internal circumferential wall, and the at least one plug-in part of the supporter is located in the at least one recess at a position where at least a part of the periphery contacts with, is engaged with or abuts against at least a part of the internal circumferential wall.
16 . The reactor according to claim 12 , wherein the at least one plug-in part of the supporter comprises a first plug-in part and a second plug-in part spaced apart from each other by a distance or adjacent to each other.
17 . The reactor according to claim 16 , wherein the at least one recess comprises a first recess and a second recess; and wherein, when the at least one plug-in part of the supporter is inserted into the at least one recess, the first plug-in part is inserted into the first recess, and the second plug-in part is inserted into the second recess.
18 . The reactor according to claim 16 , wherein the at least one recess is sized or shaped such that at least one of the first plug-in part and the second plug-in part is accommodated in the at least one recess when the at least one plug-in part of the supporter is inserted in the at least one recess.
19 . The reactor according to claim 12 , wherein at least one key or positioning pin is provided on the at least one plug-in part of the supporter, and at least one groove matched with the at least one key or positioning pin is provided on a side wall of the at least one recess of the substrate carrier; and
wherein, when the at least one plug-in part of the supporter is inserted into the at least one recess, the at least one key or positioning pin is at least partially engaged with or contacts with the at least one groove, so as to enable synchronous movement of the at least one plug-in part and the at least one recess.
20 . The reactor according to claim 12 , wherein the at least one recess comprises a first recess and a second recess distributed on the second surface of the substrate carrier, and spaced apart from each other by a distance or adjacent to each other.