Shunt driver circuit for laser diode with push pull architecture
A shunt driver for driving an LD is disclosed. The shunt driver has the push-pull architecture with the high side driver and the low side driver. The high side driver is driven by a positive phase signal superposed with a signal with a phase opposite to the negative phase signal. The low side driver is driven by a negative phase signal superposed with a signal with a phase opposite to the positive phase signal. Adjusting the magnitude of the superposed signals, the driving current for the LD has the peaking in the rising and falling edges thereof.
1. A driver for providing a push current to a semiconductor laser diode (LD) and extracting a pull current from the LD, the driver being driven by a differential signal including a positive phase signal and a negative phase signal, comprising:
a positive buffer configured to generate a first positive signal and a first negative signal from the positive phase signal;
a negative buffer configured to generate a second positive signal and a second negative signal from the negative phase signal;
a high side driver for generating the push current supplied to the LD, the high side driver being driven by the first positive signal superposed with the second positive signal; and
a low side driver for generating the pull current extracted from the LD, the low side driver being driven by the second negative signal superposed with the first negative signal.
2. The driver of claim 1 ,
wherein the high side driver provides a transistor driven by the first positive signal superposed with the second positive signal, and the low side driver provides a transistor driven by the second negative signal superposed with the first negative signal, the push transistor and the pull transistor being connected in series between a power supply and a ground, and
wherein the LD is coupled with a node between two transistors.
3. The driver of claim 2 ,
wherein the transistor in the high side driver is an n-type MOSFET and the transistor in the low side driver is an npn-type bipolar transistor.
4. The driver of claim 3 ,
wherein the high side driver further includes a p-type MOSFET between the n-type MOSFET an the node, and
wherein the push current is provided from a drain of the p-type MOSFET.
5. The driver of claim 4 ,
wherein the n-type MOSFET, the p-type MOSFET, and the npn-type bipolar transistor are individually biased.
6. The driver of claim 1 ,
wherein the positive buffer includes a bipolar transistor with abase receiving the positive phase signal, an emitter outputting the first positive signal, and a collector outputting the first negative signal, and
wherein the negating buffer includes another bipolar transistor with a base receiving the negative phase signal, an emitter outputting the second negative signal, and a collector outputting the second positive signal.
7. The driver of claim 6 ,
wherein the first positive signal and the second positive signal are provided to the high side driver via respective capacitors, and
wherein the first negative signal and the second negative signal are provided to the low side driver via respective capacitors.
8. The driver of claim 6 ,
further includes a high side emitter follower and a low side emitter follower, the high side emitter follower buffering the collector of the bipolar transistor in the positive buffer, the low side emitter follower buffering the collector of the bipolar transistor of the negating buffer.
9. The driver of claim 8 ,
wherein the first positive signal output from the emitter of the bipolar transistor of the positive buffer is provided to the high side driver via a delay line, and the second negative signal output from the emitter of the bipolar transistor of the negative buffer is provided to the low side driver via another delay line.
10. The driver of claim 9 ,
wherein the delay line has a delay substantially equal to a delay of the low side emitter follower, and another delay line has a delay substantially equal to a delay of the high side emitter follower.