Power semiconductor device
The purpose of the present invention is to provide a power semiconductor device which has a light weight, high heat dissipation efficiency, and high rigidity. The power semiconductor device including a base 1 , semiconductor circuits 2 which are arranged on the base 1 , and a cooling fin 3 which cools each of the semiconductor circuits 2 , in which one or more protruding portions 1 a , 1 b are formed on the base 1 , widths of the protruding portions 1 a , 1 b in a direction parallel to the base 1 surface being longer than a thickness of the base 1 , thereby providing power semiconductor devices 100, 200, 300, 400 which have a light weight, high heat dissipation efficiency, and high rigidity.
1. A power semiconductor device, comprising
a base, semiconductor circuits which are arranged on the base, and a cooling fin which cools the semiconductor circuit, wherein
one or more protruding portions of the base protrude from a surface of the base opposite the cooling fin, and
a width of the protruding portion in a direction parallel to the base surface is longer than a thickness of the base,
the protruding portion is disposed to form at least one space, and the space is filled with a gel,
a height of the protruding portion is higher than a height of the gel,
the power semiconductor device comprises connection terminals which are connected to the semiconductor circuits through electrical signal lines, and
insulating members are disposed between the protruding portion and the connection terminals.
2. The power semiconductor device as set forth in claim 1 , wherein
the cooling fin consists of a plurality of adjacent pin fins, and
a shortest distance between the plurality of adjacent pin fins constituting the cooling fin is shorter than the width of the protruding portion.
3. The power semiconductor device as set forth in claim 1 , wherein a thickness of a bottom portion of the base is less than or equal to 2 millimeters.
4. The power semiconductor device as set forth in claim 1 , wherein the cooling fin is arranged on one side of the base opposite to a surface on which the semiconductor circuit is arranged.
5. The power semiconductor device as set forth in claim 1 , in which
the protruding portion are formed at least two, and
the semiconductor circuit is arranged between the two protruding portions.
6. The power semiconductor device as set forth in claim 1 , wherein the insulating member is a member including a resin.
7. The power semiconductor device as set forth in claim 1 , wherein the semiconductor circuit is secured to the base through a solder.
8. The power semiconductor device as set forth in claim 1 , wherein the semiconductor circuit is directly secured to the base by forming an alloy layer at the interface.
9. The power semiconductor device as set forth in claim 1 , wherein the base is a member including aluminum.
10. The power semiconductor device as set forth in claim 1 , wherein a refrigerant is in contact with the cooling fin.