Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor
There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
1. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one element selected from the group consisting of Li and Na, and
each ratio in the number of elements for said (Pb, A)(Zr, Ti)O 3 film satisfies the following formula (3′)
1≤(Pb+A)/(Zr+Ti)≤1.35 (3′).
2. The ferroelectric crystal film according to claim 1 , wherein
said ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.
3. The ferroelectric crystal film according to claim 1 , wherein
a Zr/Ti ratio in the number of elements for said (Pb, A)(Zr, Ti)O 3 film satisfies the following formula (1):
60/40≥Zr/Ti≥40/60 (1).
4. An electronic component, comprising
said ferroelectric crystal film according to claim 1 .
5. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one selected from the group consisting of Li and Na,
said ferroelectric seed crystal film has an orientation in (001), and
said ferroelectric coated-and-sintered crystal film has an orientation in (001).
6. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one selected from the group consisting of Li and Na,
said ferroelectric seed crystal film has an orientation in (111), and
said ferroelectric coated-and-sintered crystal film has an orientation in (111).