Method for forming thin film conductors on a substrate
View Patent ↗A method for forming thin film conductors is disclosed. A thin film precursor material is initially deposited onto a porous substrate. The thin film precursor material is then irradiated with a light pulse in order to transform the thin film precursor material to a thin film such that the thin film is more electrically conductive than the thin film precursor material. Finally, compressive stress is applied to the thin film and the porous substrate to further increase the thin film's electrical conductivity.
1. A method for forming a thin film conductor on a substrate, said method comprising:
depositing a thin film precursor material onto a porous substrate;
irradiating said thin film precursor material with a light pulse to transform said thin film precursor material to a thin film, wherein said thin film is more electrically conductive than said thin film precursor material; and
applying compressive stress to said thin film and said porous substrate by a pair of pinch rollers to further increase said thin film's electrical conductivity, wherein said pinch rollers are driven at ω=v/r, where ω is an angular velocity of said pinch rollers, r is a radius of said pinch rollers, and v is a moving speed of said thin film.
2. The method of claim 1 , wherein said depositing is performed by printing.
3. The method of claim 1 , wherein said porous substrate is paper.
4. The method of claim 1 , wherein said porous substrate is polymer.
5. The method of claim 1 , wherein said applying compressive stress is accomplished by rolling or calendaring.
6. The method of claim 1 , wherein said compressive stress exceeds 25% of the ultimate tensile strength of said thin film at standard temperature and pressure.
7. The method of claim 1 , wherein said depositing is performing by chemical vapor deposition.
8. The method of claim 1 , wherein said thin film precursor material includes a particulate metal.
9. The method of claim 8 , wherein said particulate metal is a metal selected from the group consisting of copper, nickel, cobalt, silver and combinations thereof.
10. The method of claim 1 , wherein said thin film precursor material includes a particulate metal oxide and a reducing agent.
11. The method of claim 1 , wherein said thin film precursor material includes a metal salt and a reducing agent.
12. A method for forming a thin film conductor on a substrate, said method comprising:
depositing a thin film precursor material onto a porous substrate;
irradiating said thin film precursor material with a light pulse to transform said thin film precursor material to a thin film, wherein said thin film is more electrically conductive than said thin film precursor material; and
applying compressive stress to said thin film and said porous substrate to further increase said thin film's electrical conductivity, wherein said applying of compressive stress oscillates in magnitude with time.
13. The method of claim 12 , wherein said depositing is performing by chemical vapor deposition.
14. The method of claim 12 , wherein said applying compressive stress is accomplished by rolling.