Junction material, manufacturing method thereof, and manufacturing method of junction structure
The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer ( 101 ), Al-based metallic layers ( 102 a , 102 b ) on both sides thereof, and X-based metallic layers ( 103 a , 103 b ) (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers ( 102 a , 102 b ), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.
1. A junction material of soldering formed by laminating a first Al-base layer formed of a metal with a main component of Al and a first X-base layer in this order on a first main surface of a Zn-base layer formed of a metal with a main component of Zn, wherein the X-base layer is formed of a metal with a main component selected from Cu, Au, Ag and Sn, and
wherein the first main surface of the Zn-base layer directly contacts with the first Al-base layer without melting the first Al-base layer or the Zn-base layer, and
wherein a ratio of (total thickness of the first Al-base layer)/(total thickness of the Zn-base layer) is set to 1/60 to 1/3, and a ratio of (thickness of the first X-base layer)/(total thickness of the Zn-base layer and the first Al-base layer) is set to 0.0002/1 to 0.2/1.
2. The junction material of soldering according to claim 1 ,
wherein a second Al-base layer formed of a metal with a main component of Al and a second X-base layer are laminated in this order on a second main surface opposite the first main surface of the Zn-base layer; and
the second X-base layer is formed of a metal with a main component selected from Cu, Au, Ag and Sn, and
wherein the second main surface of the Zn-base layer directly contacts with the second Al-base layer.
3. The junction material of soldering according to claim 1 , wherein a second main surface opposite the first main surface of the Zn-base layer is connected to a substrate.
4. The junction material of soldering according to claim 1 , wherein the Zn-base layer is formed of one of a single body layer and an alloy layer with a main component of Zn by 90 to 100 wt. %.
5. The junction material of soldering according to claim 1 , wherein one of the first and the second Al-base layers is formed of one of a single body layer and an alloy layer with a main component of Al by 90 to 100 wt. %.
6. The junction material of soldering according to claim 1 , wherein one of the first and the second X-base layers is formed of one of a single body layer and an alloy layer with a main component of Cu by 90 to 100 wt. %.
7. The junction material of soldering according to claim 1 , wherein one of the first and the second X-base layers is formed of one of a single body layer and an alloy layer with a main component of Au by 90 to 100 wt. %.
8. The junction material of soldering according to claim 1 , wherein one of the first and the second X-base layers is formed of one of a single body layer and an alloy layer with a main component of Ag by 90 to 100 wt. %.
9. The junction material of soldering according to claim 1 , wherein one of the first and the second X-base layers is formed of one of a single body layer and an alloy layer with a main component of Sn by 90 to 100 wt. %.
10. A manufacturing method of junction material of soldering comprising:
a step of forming a first clad material formed by laminating with cold rolling a first Al-base layer and a first X-base layer formed of a metal with a main component selected from Cu, Au, Ag, and Sn on one surface of a first Zn-base layer in this order, wherein the first Al-base layer directly contacts with the first Zn-base layer without melting the first Al-base layer or the Zn-base layer;
a step of forming a second clad material formed by laminating with cold rolling a second Al-base layer and a second X-base layer formed of a metal with a main component selected from Cu, Au, Ag and Sn on one surface of a second Zn-base layer in this order, wherein the second Al-base layer directly contacts with the second Zn-base layer; and
a step of clad rolling the first clad material and the second clad material with the first Zn-base layer and the second Zn-base layers opposing to each other, and
wherein a ratio of (total thickness of the first Al-base layer)/(total thickness of the first Zn-base layer) is set to 1/60 to 1/3, and a ratio of (thickness of the first X-base layer)/(total thickness of the first Zn-base layer and the first Al-base layer) is set to 0.0002/1 to 0.2/1.
11. A manufacturing method of junction material of soldering comprising:
a step of forming a Zn-base layer interposed between a first Al-base layer of a first clad material . . . second Al-base material to clad rolling, wherein
a side opposing to the one side of the first Al-base layer directly contacts with a first side of the Zn-base layer without melting the first Al-base layer or the Zn-base layer, and
a side opposing to the one side of the second Al-base layer directly contacts with a second side opposing to the first side of the Zn-base layer without melting the second Al-base layer or the Zn-base layer, and
wherein a ratio of (total thickness of the first Al-base layer)/(total thickness of the Zn-base layer) is set to 1/60 to 1/3, and a ratio of (thickness of the first X-base layer)/(total thickness of the Zn-base layer and the first Al-base layer) is set to 0.0002/1 to 0.2/1.
12. A manufacturing method of junction structure, comprising a step of joining of a first connected member and a second connected member by heating the junction material of soldering according to claim 1 placed between the first and the second connected members.
13. The manufacturing method of junction structure according to claim 12 , wherein the heating is conducted under the condition of retaining a temperature from 275° C. to 365° C. for 1 minute or longer, and the temperature of the junction structure is lowered.
14. The manufacturing method of junction structure according to claim 12 , wherein the first connected member is a semiconductor device, and the second connected member is one of a frame, an insulating substrate, a lead and an electrode.
15. The junction material of soldering according to claim 6 , wherein an intermetallic compound formed of CuAl is generated between the first X-base layer and the first Al-base layer, or between the second X-base layer and the second Al-base layer.
16. The junction material of soldering according to claim 7 , wherein an intermetallic compound formed of AuAl is generated between the first X-base layer and the Al-base layer, or between the second X-base layer and the second Al-base layer.
17. The junction material of soldering according to claim 9 , wherein a proportion of a film thickness of the first Al-base layer, the Zn-base layer, and a second Al-base layer expressed as (first Al-base layer film thickness):(Zn-base layer film thickness):(second Al-base layer film thickness) is set be in a range from 5:1:5 to 1:2:1.