IP Library › Granted Patent US 8,814,054
Granted Patent B2
US 8,814,054 · App. 13/703,255 · Granted Aug 26, 2014

Inclusion of chip elements in a sheathed wire

Inventors: Jean Brun (Champagnier, FR); Laurent Lancon (Saint-Etienne-de-Fontbellon, FR); Dominique Vicard (Bernin, FR)
Assignee: Commissariat a l'Energie Atomique et Aux Energies Alternatives
G06K19/07749D02G3/362H01L2224/858H01L26/0655H01L2924/01058G06K19/07758H01L2224/8517G06K19/07786G06K19/07718H01L2924/00014H01L25/50H01L24/78D10B2401/18H01L2224/78H01L24/85H01L2924/01014
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Quick Facts
Patent No.
US 8,814,054
App. No.
13/703,255
Granted
Aug 26, 2014
Kind
B2
Abstract

A method for forming a sheathed wire includes the steps of: axially advancing a core through a sheathing zone; wrapping a sheathing fiber around the core in the sheathing zone; and providing, in the sheathing zone, a series of microelectronic chip elements each provided with a wire section, in such a way that the sheathing fiber that wraps around the core also wraps around a chip element and the wire section thereof to form a sheathed wire incorporating spaced-apart chip elements.

Claims (16)

1. A method for forming a sheathed wire, comprising the following steps of:

axially advancing a core through a sheathing zone;

providing, in the sheathing zone, a series of microelectronic chip elements and at least one wire section connected to each chip element from an insertion device; and,

wrapping a sheathing fiber around the core in the sheathing zone, around the microelectronic chip elements, and around the wire sections concurrently with the step of providing the microelectronic chip elements and the wire sections in the sheathing zone from the insertion device to form the sheathed wire such that the microelectronic chip elements are spaced-apart from each other.

2. The method according to claim 1 , wherein the series of microelectronic chip elements is provided in the form of a chain comprising the microelectronic chip elements attached to the wire sections, each of the wire sections including a notch forming a preferential breaking point when the wire section is submitted to tensile stress.

3. The method according to claim 2 , wherein the chain is provided in the sheathing zone by a guide unit.

4. The method according to claim 2 , wherein the chain is provided in the sheathing zone by a tube inclined with respect to a longitudinal axis of the core.

5. The method according to claim 2 , further comprising driving the chain towards the sheathing zone by friction between rollers, the rollers configured to be temporarily stopped on each passing of one of the microelectronic chip elements.

6. The method according to claim 2 , wherein the chain is provided in the sheathing zone at a speed lower than an advancing speed of the core.

7. A sheathed wire comprising:

a core;

a sheathing fiber wrapped around the core;

microelectronic chip elements disposed between the core and the sheathing fiber, and spaced apart along the sheathed wire; and

at least one wire section connected to each microelectronic chip and disposed between the core and the sheathing fiber, the at least one wire section including a notch forming a preferential breaking point when the wire section is submitted to tensile stress.

8. The sheathed wire according to claim 7 , wherein the at least one wire section includes two conductive wire sections, the two conductive wire sections each being substantially parallel to the core and configured to form a dipole antenna when connected to radio frequency transceiver circuits integrated into the microelectronic chip element.

9. The sheathed wire according to claim 7 , wherein the notch defines an end of the at least one wire section.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2012
From: BRUN, JEAN; LANCON, LAURENT; VICARD, DOMINIQUE
To: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Reel/Frame 029475/0718 →
Priority Claims (1)
FR 10 02656 · Jun 24, 2010 · national
Continuity (1)
Related Publication 20130092742A1 · Apr 18, 2013