Indium target and method for manufacturing same
View Patent ↗Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm 3 or less.
1. A sputtering target consisting of indium at a purity of at least 99.99% by mass, wherein:
the target has cast structure;
an overall average grain size is 1 to 10 mm;
for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and
pores with a pore size of 50 μm or greater exists at a density of 0 pore/cm 3 .
2. The sputtering target according to claim 1 , wherein the maximum grain size is 20 mm or less.
3. The sputtering target according to claim 1 , wherein the maximum grain size is 5 to 20 mm.
4. A method for manufacturing the sputtering target according to claim 1 , the method comprising melting and casting an indium raw material, wherein ultrasonic vibration is applied at least at the time of solidification of the indium raw material, and cooling is carried out at a time of melting and casting at a cooling rate of 3° C./min to 8° C./min.
5. A sputtering target consisting of indium at a purity of at least 99.99% by mass, wherein:
the target has cast structure;
an overall average grain size is 1 to 3 mm;
for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and
pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm 3 or less.
6. The sputtering target according to claim 5 , wherein the maximum grain size is 5 to 20 mm.
7. A method for manufacturing the sputtering target according to claim 5 , the method comprising melting and casting an indium raw material, wherein ultrasonic vibration is applied at least at the time of solidification of the indium raw material, and cooling is carried out at a time of melting and casting at a cooling rate of 20° C./min or higher.