Method for preparing switch transistor and equipment for etching the same
View Patent ↗The present invention discloses a method for preparing switch transistor comprising: sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer of the switch transistor on a glass substrate; patterning the source/drain metal layer to expose the active layer; and proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate to form a channel of the switch transistor. The present invention further discloses an equipment for etching the switch transistor. In the way mentioned above, the present invention can minimize the damages to the switch transistor and improve the reliability of the switch transistor.
1. A method for preparing switch transistor, comprising:
sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer of the switch transistor on a glass substrate, the active layer comprising an amorphous silicon layer adjacent to the insulation layer and an n + amorphous silicon layer formed on the amorphous silicon layer;
patterning the source/drain metal layer to expose the n + amorphous silicon layer and correspondingly forming an input electrode and an output electrode of the switch transistor; and
proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate to form a channel of the switch transistor, which comprises using a plasma etching with first energy to etch the exposed n + amorphous silicon layer to expose the amorphous silicon layer, and using a plasma etching with second energy to etch the exposed amorphous silicon layer to remove a part of the amorphous silicon layer; wherein the second energy is less than the first energy, which gradually reduces the etching rate;
wherein, the etching process is a dry plasma etching, the switch transistor is a thin film transistor, the control electrode of the switch transistor is corresponding to a gate of the thin film transistor, and the input electrode and the output electrode are a source and a drain of the thin film transistor, respectively.
2. The method as claimed in claim 1 , wherein the step of using a plasma etching with second energy to etch the exposed amorphous silicon layer comprises:
reducing the required power of the plasma etching to etch the exposed amorphous silicon layer by the plasma etching with second energy.
3. The method as claimed in claim 1 , wherein the step of proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate comprises:
using a plasma etching with first concentration to etch the exposed n + amorphous silicon layer to expose the amorphous silicon layer;
using a plasma etching with second concentration to etch the exposed amorphous silicon layer to remove a part of the amorphous silicon layer; and
wherein the second concentration is less than the first concentration, which gradually reduces the etching rate.
4. The method as claimed in claim 3 , wherein the step of using a plasma etching with second concentration to etch the exposed amorphous silicon layer comprises:
reducing the gas flow of the etching gas of the plasma etching to etch the exposed amorphous silicon layer by the plasma etching with second concentration.
5. A method for preparing switch transistor, comprising:
sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer of the switch transistor on a glass substrate, the active layer comprising an amorphous silicon layer adjacent to the insulation layer and an n + amorphous silicon layer formed on the amorphous silicon layer;
patterning the source/drain metal layer to expose the n + amorphous silicon layer and correspondingly forming an input electrode and an output electrode of the switch transistor; and
proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate to form a channel of the switch transistor, which comprises using a plasma etching with first energy to etch the exposed n + amorphous silicon layer to expose the amorphous silicon layer, and using a plasma etching with second energy to etch the exposed amorphous silicon layer to remove a part of the amorphous silicon layer; wherein the second energy is less than the first energy, which gradually reduces the etching rate.
6. The method as claimed in claim 5 , wherein the step of using a plasma etching with second energy to etch the exposed amorphous silicon layer comprises:
reducing the required power of the plasma etching to etch the exposed amorphous silicon layer by the plasma etching with second energy.
7. The method as claimed in claim 5 , wherein the step of proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate comprises:
using a plasma etching with first concentration to etch the exposed n + amorphous silicon layer to expose the amorphous silicon layer;
using a plasma etching with second concentration to etch the exposed amorphous silicon layer to remove a part of the amorphous silicon layer; and
wherein the second concentration is less than the first concentration, which gradually reduces the etching rate.
8. The method as claimed in claim 7 , wherein the step of using a plasma etching with second concentration to etch the exposed amorphous silicon layer comprises:
reducing the gas flow of the etching gas of the plasma etching to etch the exposed amorphous silicon layer by the plasma etching with second concentration.