IP Library Granted Patent US 9,595,420
Granted Patent B2
US 9,595,420 · App. 13/706,426 · Granted Mar 14, 2017

Method for preparing lamella

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Quick Facts
Patent No.
US 9,595,420
App. No.
13/706,426
Granted
Mar 14, 2017
Kind
B2
Abstract

A FIB is irradiated onto a sample to form a lamella whose upper side has a thickness of 100 nm or less and whose lower side has a thickness greater than that of the upper side. First and second measurement regions are set on an observation image of the lamella on the upper and lower sides, respectively, where the lamella is thin enough to transmit therethrough an EB. An EB is irradiated onto the first and second measurement regions and charged particles generated therefrom are detected, and a slant angle of one degree or smaller is calculated based on the detected amount of charged particles generated from the first and second measurement regions and the distance between the two regions. The lamella is slanted with respect to the FIB and then irradiated by the FIB by the calculated slant angle to uniformize the thickness of the lamella to a value of 100 nm or smaller.

Claims (28)

1. A lamella preparation method of preparing a lamella having a thickness of 100 nm or smaller by performing processing of a sample using a focused ion beam, the lamella preparation method comprising:

irradiating a focused ion beam onto a sample to form a lamella having an upper side having a thickness of 100 nm or smaller and a lower side having a thickness larger than that of the upper side;

irradiating an electron beam onto the lamella to form an observation image;

setting a first measurement region on the upper side of the lamella and a second measurement region on the lower side of the lamella in the observation image, the first and second measurement regions being set at locations where the lamella is thin enough to transmit therethrough the electron beam;

irradiating the electron beam onto the first measurement region and the second measurement region and detecting charged particles generated therefrom;

calculating a slant angle of the lamella of one degree or smaller based on (a) a difference between the thickness of the first measurement region, which is estimated from a detected amount of the charged particles generated from the first measurement region, and the thickness of the second measurement region, which is estimated from a detected amount of the charged particles generated from the second measurement region, and (b) the distance between the first measurement region and the second measurement region;

slanting the lamella with respect to the focused ion beam by the slant angle so that a first surface of the lamella is parallel with an irradiation axis of the focused ion beam; and

irradiating the focused ion beam onto a second surface of the lamella, which is opposite to the first surface, to perform finish processing to uniformize the thickness of the lamella to a value of 100 nm or smaller.

2. A lamella preparation method according to claim 1 , further comprising setting a reference region that is in a vicinity of the lamella and that is in a part of the sample having a thickness through which the electron beam does not transmit, irradiating the electron beam onto the reference region, and detecting charged particles generated therefrom,

wherein the slant angle is calculated by standardizing the detected amount of the charged particles generated from the first measurement region and the detected amount of the charged particles generated from the second measurement region using a detected amount of the charged particles generated from the reference region.

3. A lamella preparation method according to claim 1 , wherein the charged particles comprise one of reflected electrons and secondary electrons.

4. A lamella preparation method according to claim 1 , wherein the lamella comprises a sample for TEM observation.

5. A lamella preparation method of preparing a lamella having a thickness of 100 nm or smaller by performing processing of a sample using a focused ion beam, the lamella preparation method comprising:

irradiating a focused ion beam onto a sample to form a lamella having an upper side having a thickness of 100 nm or smaller and a lower side having a thickness larger than that of the upper side;

irradiating an electron beam onto the lamella to form an observation image;

setting a first measurement region on the upper side of the lamella and a second measurement region on the lower side of the lamella in the observation image, the first and second measurement regions being set at locations where the lamella is thin enough to transmit therethrough the electron beam;

irradiating the electron beam onto the first measurement region and the second measurement region and detecting charged particles generated therefrom;

determining the thickness of the first measurement region based on the detected charged particles generated from the first measurement region and determining the thickness of the second measurement region based on the detected charged particles generated from the second measurement region;

calculating a slant angle of the lamella of one degree or smaller based on the difference in thickness between the first and second measurement regions and the distance between the first and second measurement regions;

slanting the lamella with respect to the focused ion beam by the slant angle so that a first surface of the lamella is parallel with an irradiation axis of the focused ion beam; and

irradiating the focused ion beam onto the a second surface of the lamella, which is opposite to the first surface, to perform finish processing to uniformize the thickness of the lamella to a value of 100 nm or smaller.

6. A lamella preparation method according to claim 5 , further comprising setting a reference region that is in a vicinity of the lamella and that is in a part of the sample having a thickness through which the electron beam does not transmit, irradiating the electron beam onto the reference region, and detecting charged particles generated therefrom,

wherein the slant angle is calculated by standardizing the detected amount of the charged particles generated from the first measurement region and the detected amount of the charged particles generated from the second measurement region using a detected amount of the charged particles generated from the reference region.

7. A lamella preparation method according to claim 5 , wherein the charged particles comprise one of reflected electrons and secondary electrons.

8. A lamella preparation method according to claim 5 , wherein the lamella comprises a sample for TEM observation.

9. A lamella preparation method according to claim 5 , wherein the thicknesses of the first and second measurement regions are determined by comparing the amounts of detected charged particles generated from the first and second measurement regions with the amount of charged particles generated from a reference sample of known thickness when the reference sample is irradiated with an electron beam.

10. A lamella preparation method according to claim 5 , wherein in the calculating a slant angle, the distance between the first measurement region and the second measurement region, which have been set in the observation image, is a distance between a center of the first measurement region and a center of the second measurement region as seen from a side of an observation surface of the lamella through which the electron beam is transmitted.

11. A lamella preparation method according to claim 1 , wherein in the calculating a slant angle, the distance between the first measurement region and the second measurement region, which have been set in the observation image, is a distance between a center of the first measurement region and a center of the second measurement region as seen from a side of an observation surface of the lamella through which the electron beam is transmitted.

Assignments (3)
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072903/0636 →
CHANGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072909/0223 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2013
From: NAKATANI, IKUKO
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 031138/0787 →