Resist composition, method of forming resist pattern and compound
A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid-generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound represented by general formula (c1) shown below. In the formula, R 1 represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; each of R 2 and R 3 independently represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; at least two of R 1 to R 3 may be mutually bonded to form a ring; X represents an oxygen atom or a sulfur atom; n represents 0 or 1; and Z + represents an organic cation.
1. A resist composition comprising:
a base component (A) that exhibits changed solubility in a developing solution by the action of acid;
a photoreactive quencher (C); and
an acid-generator component (B) that generates acid upon exposure, wherein
the photoreactive quencher (C) contains a monomeric compound represented by general formula (c1) shown below:
wherein R 1 represents a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; each of R 2 and R 3 represents a hydrogen atom; X represents an oxygen atom; n represents 0 or 1; and Z + represents an organic cation.
2. The resist composition according to claim 1 , wherein R 1 represents a cyclic alkyl group of 3 to 20 carbon atoms which may have a substituent, and n represents 1 in the general formula (c1).
3. The resist composition according to claim 1 , wherein the base component (A) is a base component (A0) that exhibits increased polarity by the action of acid.
4. The resist composition according to claim 1 , wherein Z + is an organic cation represented by general formula (ca-1) shown below:
wherein each of R 1 ″ to R 3 ″ independently represents an aryl group, alkyl group or alkenyl group, provided that two of R 1 ″ to R 3 ″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R 1 ″ to R 3 ″ has a substituent represented by —C(═O)—O—R 6′ or —O—C(═O)—R 7′ , wherein R 6′ and R 7′ independently represents a linear or branched saturated hydrocarbon group of 1 to 25 atoms, a cyclic saturated hydrocarbon group of 3 to 20 carbon atoms or a linear or branched, aliphatic unsaturated hydrocarbon group of 2 to 5 carbon atoms.
5. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 1 ; conducting exposure of the resist film; and developing the resist film to form a resist pattern.
6. A monomeric compound represented by general formula (c1) shown below:
wherein R 1 represents a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; each of R 2 and R 3 independently represents a hydrogen atom; X represents an oxygen atom; n represents 0 or 1; and Z + represents an organic cation.
7. The compound according to claim 6 , wherein R 1 represents a cyclic alkyl group of 3 to 20 carbon atoms which may have a substituent, and n represents 1 in the general formula (c1).
8. The monomeric compound according to claim 6 , wherein Z + is an organic cation represented by general formula (ca-1) shown below:
wherein each of R 1 ″ to R 3 ″ independently represents an aryl group, alkyl group or alkenyl group, provided that two of R 1 ″ to R 3 ″ may be bonded to each other to form a ring with the sulfur atom, and at least one of R 1 ″ to R 3 ″ has a substituent represented by —C(═O)—O—R 6′ or —O—C(═O)—R 7′ , wherein R 6′ and R 7′ independently represents a linear or branched saturated hydrocarbon group of 1 to 25 atoms, a cyclic saturated hydrocarbon group of 3 to 20 carbon atoms or a linear or branched, aliphatic unsaturated hydrocarbon group of 2 to 5 carbon atoms.