Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
1. A semiconductor structure comprising:
a substrate;
disposed over the substrate, a single-crystalline layer comprising a first III-nitride semiconductor material; and
disposed over the single-crystalline layer, a polycrystalline layer comprising a second III-nitride semiconductor material.
2. The semiconductor structure of claim 1 , wherein the first III-nitride semiconductor material and the second III-nitride semiconductor material are the same.
3. The semiconductor structure of claim 1 , wherein the single-crystalline layer comprises a nucleation layer comprising a plurality of pits and, disposed thereover, a bulk layer substantially free of pits.
4. The semiconductor structure of claim 3 , wherein the nucleation layer and the bulk layer each comprise a material selected from the group consisting of GaN, AlN, InN, and ternary and quaternary alloys and mixtures including one or more thereof.
5. The semiconductor structure of claim 3 , wherein the single-crystalline layer comprises, disposed between the nucleation layer and the bulk layer, a transitional layer having a morphology that is less pitted with increasing thickness.
6. The semiconductor structure of claim 5 , wherein the transitional layer comprises a material selected from the group consisting of GaN, AlN, InN, and ternary and quaternary alloys and mixtures including one or more thereof.
7. The semiconductor structure of claim 1 , wherein the substrate is selected from the group consisting of sapphire, silicon carbide, gallium arsenide, zinc oxide, silicon, spinel, lithium gallate, and lithium aluminate.
8. The semiconductor structure of claim 1 , further comprising an epitaxial nitride layer disposed between the substrate and the single-crystalline layer.
9. The semiconductor structure of claim 8 , wherein the epitaxial nitride layer comprises a material selected from the group consisting of GaN, AlN, InN, and ternary and quaternary alloys and mixtures including one or more thereof.
10. The semiconductor structure of claim 1 , wherein the second III-nitride semiconductor material comprises a material selected from the group consisting of GaN, AlN, InN, and ternary and quaternary alloys and mixtures including one or more thereof.