IP Library Granted Patent US 8,983,251
Granted Patent B2
US 8,983,251 · App. 13/710,093 · Granted Mar 17, 2015

Electro-optical waveguide apparatuses and methods thereof

Inventors: Zhaolin Lu (Pittsford, NY); Wangshi Zhao (Rochester, NY)
Assignee: Rochester Institute of Technology
G02B6/10H01L31/18B82Y10/00B82Y30/00G02F1/015H01L29/1606G02F2001/0153G02F2203/10G02B6/1226
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Quick Facts
Patent No.
US 8,983,251
App. No.
13/710,093
Granted
Mar 17, 2015
Kind
B2
Abstract

An apparatus with either a graphene sheet or an epsilon-near-zero layer sandwiched in a waveguide structure and a tuning device. The tuning device is configured to selectively control application of at least first and second gate voltages across the waveguide structure. The graphene sheet has a first dielectric constant which is zero and the waveguide structure operates at a first absorption state and a first propagation distance with application of the first voltage by the tuning device and has a second dielectric constant and the waveguide structure operates at a second absorption state and a second propagation distance with application of the second voltage. The second dielectric constant is larger than the first dielectric constant, the second absorption state is smaller than the first absorption state, the second propagation distance is longer than the first propagation distance, and the second voltage which is zero or smaller than the first voltage.

Claims (38)

1. An electro-optical waveguide apparatus comprising:

a graphene sheet having opposing surfaces sandwiched in a waveguide structure; and

a tuning device configured to selectively control application of at least first and second gate voltages across the waveguide structure, the graphene sheet having a first dielectric constant which is zero and the waveguide structure operating at a first absorption state and a first propagation distance with application of the first gate voltage by the tuning device, and the graphene sheet having a second dielectric constant which is larger than the first dielectric constant and the waveguide structure operating at a second absorption state which is smaller than the first absorption state and a second propagation distance which is longer than the first propagation distance with application of the second gate voltage which is zero or smaller than the first gate voltage by the tuning device.

2. The apparatus of claim 1 wherein the waveguide structure comprises a dielectric waveguide structure having a dielectric material over each of the opposing surfaces of the graphene sheet.

3. The apparatus of claim 1 wherein the waveguide structure comprises a dielectric strip waveguide structure with the dielectric material over one of the opposing surfaces of the graphene sheet having a different width then the dielectric material over the other one of the opposing surfaces of the graphene sheet.

4. The apparatus of claim 1 wherein the waveguide structure comprises a metal waveguide structure having a different conductive material over each of the opposing surfaces of the graphene sheet.

5. The apparatus of claim 1 wherein the waveguide structure comprises a metal strip waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a different width then another conductive material over the other one of the opposing surfaces of the graphene sheet.

6. The apparatus of claim 1 wherein the waveguide structure comprises a plasmonic waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a dielectric material over the other one of the opposing surfaces of the graphene sheet.

7. The apparatus of claim 1 wherein the waveguide structure comprises a plasmonic waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a different width then a dielectric material over the other one of the opposing surfaces of the graphene sheet.

8. The apparatus of claim 1 wherein the graphene sheet comprises one of a mono-atomic layer, a bi-atomic layer, or a multi-atomic layer.

9. The apparatus of claim 1 further comprising one of an insulating layer or a semiconductor buffer layer on one of the opposing surfaces of the graphene sheet.

10. The apparatus of claim 9 further comprising one of another insulating layer or another semiconductor buffer layer on the other one of the opposing surfaces of the graphene sheet.

11. The apparatus of claim 1 wherein the electro-optical apparatus comprises one of an electro-optic modulator, an all-optic modulator, or a optical detector.

12. A method for making an electro-optical apparatus, the method comprising:

providing a graphene sheet having opposing surfaces sandwiched in a waveguide structure; and

providing a tuning device configured to selectively control application of at least first and second gate voltages across the waveguide structure, the graphene sheet having a first dielectric constant which is zero and the waveguide structure operating at a first absorption state and a first propagation distance with application of the first gate voltage by the tuning device, and the graphene sheet having a second dielectric constant which is larger than the first dielectric constant and the waveguide structure operating at a second absorption state which is smaller than the first absorption state and a second propagation distance which is longer than the first propagation distance with application of the second gate voltage which is zero or smaller than the first gate voltage by the tuning device.

13. The method of claim 12 wherein the waveguide structure comprises a dielectric waveguide structure having a dielectric material over each of the opposing surfaces of the graphene sheet.

14. The method of claim 12 wherein the waveguide structure comprises a dielectric strip waveguide structure with the dielectric material over one of the opposing surfaces of the graphene sheet having a different width then the dielectric material over the other one of the opposing surfaces of the graphene sheet.

15. The method of claim 12 wherein the waveguide structure comprises a metal waveguide structure having a different conductive material over each of the opposing surfaces of the graphene sheet.

16. The method of claim 12 wherein the waveguide structure comprises a metal strip waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a different width then another conductive material over the other one of the opposing surfaces of the graphene sheet.

17. The method of claim 12 wherein the waveguide structure comprises a plasmonic waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a dielectric material over the other one of the opposing surfaces of the graphene sheet.

18. The method of claim 12 wherein the waveguide structure comprises a plasmonic waveguide structure with a conductive material over one of the opposing surfaces of the graphene sheet having a different width then a dielectric material over the other one of the opposing surfaces of the graphene sheet.

19. The method of claim 12 wherein the graphene sheet comprises one of a mono-atomic layer, a bi-atomic layer, or a multi-atomic layer.

20. The method of claim 12 further comprising providing one of an insulating layer or a semiconductor buffer layer on one of the opposing surfaces of the graphene sheet.

21. The method of claim 20 further comprising providing one of another insulating layer or another semiconductor buffer layer on the other one of the opposing surfaces of the graphene sheet.

22. The method of claim 12 wherein the electro-optical apparatus comprises one of an electro-optic modulator, an all-optic modulator, or a optical detector.

23. An electro-optical waveguide apparatus comprising:

an epsilon-near-zero layer having opposing surfaces sandwiched in a waveguide structure; and

a tuning device configured to selectively control application of at least first and second gate voltages across the waveguide structure, the epsilon-near-zero layer having a first dielectric constant which is zero and the waveguide structure operating at a first absorption state and a first propagation distance with application of the first gate voltage by the tuning device, and the epsilon-near-zero layer having a second dielectric constant which is larger than the first dielectric constant and the waveguide structure operating at a second absorption state which is smaller than the first absorption state and a second propagation distance which is longer than the first propagation distance with application of the second gate voltage which is zero or smaller than the first gate voltage by the tuning device.

24. The apparatus as set forth in claim 23 wherein the epsilon-near-zero layer comprises a transparent conducting oxide.

25. The apparatus as set forth in claim 23 wherein the waveguide structure comprises a laser beam steering structure with the epsilon-near-zero layer sandwiched between at least a dielectric layer and a grating layer.

26. The apparatus as set forth in claim 25 wherein the laser beam steering structure further comprises at least one insulating layer between the dielectric layer and the epsilon-near-zero layer.

27. A method for making an electro-optical apparatus, the method comprising:

providing an epsilon-near-zero layer having an opposing surfaces sandwiched in a waveguide structure; and

providing a tuning device configured to selectively control application of at least first and second gate voltages across the waveguide structure, the epsilon-near-zero layer having a first dielectric constant which is zero and the waveguide structure operating at a first absorption state and a first propagation distance with application of the first gate voltage by the tuning device, and the epsilon-near-zero layer having a second dielectric constant which is larger than the first dielectric constant and the waveguide structure operating at a second absorption state which is smaller than the first absorption state and a second propagation distance which is longer than the first propagation distance with application of the second gate voltage which is zero or smaller than the first gate voltage by the tuning device.

28. The method as set forth in claim 27 wherein the epsilon-near-zero layer comprises a transparent conducting oxide.

29. The method as set forth in claim 27 wherein the waveguide structure comprises a laser beam steering structure with the epsilon-near-zero layer sandwiched between at least a dielectric layer and a grating layer.

30. The method as set forth in claim 29 wherein the laser beam steering structure further comprises at least one insulating layer between the dielectric layer and the epsilon-near-zero layer.

Assignments (3)
CONFIRMATORY LICENSE Recorded May 27, 2020
From: ROCHESTER INSTITUTE OF TECHNOLOGY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 052757/0370 →
CONFIRMATORY LICENSE Recorded Jun 10, 2015
From: ROCHESTER INSTITUTE OF TECHNOLOGY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035881/0700 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2013
From: LU, ZHAOLIN; ZHAO, WANGSHI
To: ROCHESTER INSTITUTE OF TECHNOLOGY
Reel/Frame 030038/0098 →
Continuity (3)
Provisional Application 61569059 · Dec 9, 2011
Provisional Application 61640519 · Apr 30, 2012
Related Publication 20140023321A1 · Jan 23, 2014