Integrated semiconductor structure for SRAM and fabrication methods thereof
A SRAM device with metal gate transistors is provided. The SRAM device includes a PMOS structure and an NMOS structure over a substrate. Each of the PMOS and the NMOS structure includes a p-type metallic work function layer and an n-type metallic work function layer. The p-type work metallic function layer and the n-type metallic work function layer form a combined work function for the PMOS and the NMOS structures.
1. A semiconductor device comprising:
a NMOS structure, comprising,
a first gate dielectric overlying a substrate;
a first metal gate overlying the first gate dielectric;
a second metal gate overlying the first metal gate; and
a first conductor overlying the second metal gate; and
a PMOS structure, comprising,
a second gate dielectric overlying the substrate;
a third metal gate overlying the second gate dielectric;
a fourth metal gate overlying the third metal gate; and
a second conductor overlying the fourth metal gate,
wherein the first metal gate is the same as the third metal gate and the second metal gate layer is the same as the fourth metal gate, and
wherein a work function of the NMOS structure and the PMOS structure is a combined work function resulted by a p-type work function and an n-type work function.
2. The semiconductor device of claim 1 , wherein the device is static random access memory (SRAM).
3. The semiconductor device of claim 1 , wherein the first and the third metal gates are p-type work function layers.
4. The semiconductor device of claim 3 , wherein the p-type work function layers are titanium nitride, tantalum nitride, or cobalt.
5. The semiconductor device of claim 1 , wherein the second and the fourth metal gates are n-type work function layers.
6. The semiconductor device of claim 5 , wherein the n-type work function layers are titanium, tantalum, aluminum, or combinations thereof.
7. The semiconductor device of claim 1 , wherein the PMOS structure has a combined work function ranging from about 4.4 eV to about 4.8 eV.
8. The semiconductor device of claim 1 , wherein the NMOS structure has a combined work function ranging from about 4.4 eV to about 4.8 eV.
9. The semiconductor device of claim 1 , wherein the PMOS and the NMOS structures have combined work functions being about 4.6.
10. A semiconductor device comprising:
a SRAM cell having a first PMOS and a first NMOS; and
a CMOS cell having a second PMOS and a second NMOS,
wherein a work function of the first PMOS is the same as a work function of the first NMOS and a work function of the second PMOS is different from a work function of the second NMOS.
11. The semiconductor device of claim 10 , wherein the first PMOS and the first NMOS comprise a p-type work function layer and an n-type work function layer.
12. The semiconductor device of claim 10 , wherein the second NMOS does not comprise a p-type work function layer.
13. A device comprising:
a NMOS structure that includes:
a first metal gate; and
a second metal gate overlying the first metal gate;
a PMOS structure that includes:
a third metal gate; and
a fourth metal gate overlying the third metal gate; and
wherein a work function of the NMOS structure and the PMOS structure is a combined work function resulted by a p-type work function and an n-type work function.
14. The device of claim 13 , wherein the first and third metal gates have the p-type work function and the second and fourth metal gates have the n-type work function.
15. The device of claim 13 , wherein the first and third metal gates have the n-type work function and the second and fourth metal gates have the p-type work function.
16. The device of claim 13 , further comprising a CMOS cell having another PMOS structure and another NMOS structure, wherein a work function of the another PMOS structure is the same as the work function of the NMOS structure and a work function of the another PMOS structure is different from the work function of the NMOS structure.
17. The device of claim 13 , wherein the PMOS structure has a combined work function ranging from about 4.4 eV to about 4.8 eV, and
wherein the NMOS structure has a combined work function ranging from about 4.4 eV to about 4.8 eV.
18. The device of claim 13 , further comprising a first conductor overlying the second metal gate and a second conductor overlying the fourth metal gate.
19. The device of claim 13 , wherein the first, second, third, and fourth metal gates are formed from at least one of titanium nitride, tantalum nitride, cobalt, titanium, tantalum, aluminum, or combinations thereof.
20. The semiconductor device of claim 1 , wherein a work function of the NMOS structure and the PMOS structure is a combined work function resulted by a p-type work function and an n-type work function.