IP Library Granted Patent US 9,076,785
Granted Patent B2
US 9,076,785 · App. 13/711,042 · Granted Jul 7, 2015

Method and structures for via substrate repair and assembly

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Quick Facts
Patent No.
US 9,076,785
App. No.
13/711,042
Granted
Jul 7, 2015
Kind
B2
Abstract

A component can include a substrate having an opening extending between first and second surfaces thereof, and an electrically conductive via having first and second portions. The first portion can include a first layer structure extending within the opening and at least partially along an inner wall of the opening, and a first principal conductor extending within the opening and at least partially overlying the first layer structure. The first portion can be exposed at the first surface and can have a lower surface located between the first and second surfaces. The second portion can include a second layer structure extending within the opening and at least partially along the lower surface of the first portion, and a second principal conductor extending within the opening and at least partially overlying the second layer structure. The second portion can be exposed at the second surface.

Claims (26)

1. A component, comprising:

a substrate having a first surface, a second surface opposite from the first surface, and an opening extending between the first and second surfaces, the opening having an inner wall extending between the first and second surfaces, a dielectric material being exposed at the inner wall; and

an electrically conductive via, including:

a first portion including a first layer structure extending within the opening and at least partially along the inner wall, the first layer structure contacting the dielectric material exposed at the inner wall, and a first principal conductor extending within the opening and at least partially overlying the first layer structure within the opening, the first portion being exposed at the first surface and having a concave lower surface located between the first and second surfaces, a center of the concave lower surface being located closer to the first surface of the substrate than a periphery of the concave lower surface; and

a second portion including a second layer structure extending within the opening and at least partially along the lower surface of the first portion, the second layer structure contacting the dielectric material exposed at the inner wall and extending into a concavity defined by the concave lower surface of the first portion, and a second principal conductor extending within the opening and at least partially overlying the second layer structure within the opening, the second principal conductor extending from the second layer structure towards the second surface, the second portion being exposed at the second surface.

2. The component as claimed in claim 1 , wherein the first and second principal conductors consist essentially of the same material.

3. The component as claimed in claim 2 , wherein the second layer structure is discontinuous, such that the second principal conductor partially contacts the first portion of the conductive via.

4. The component as claimed in claim 2 , wherein the second layer structure is continuous, such that the second layer structure separates the second principal conductor from the first portion of the conductive via.

5. The component as claimed in claim 2 , wherein the material of the first principal conductor has a different grain size than the material of the second principal conductor.

6. The component as claimed in claim 1 , wherein the first principal conductor consists essentially of a first material, and the second principal conductor consists essentially of a second material different than the first material.

7. The component as claimed in claim 6 , wherein the second layer structure is discontinuous, such that the second principal conductor partially contacts the first portion of the conductive via.

8. The component as claimed in claim 6 , wherein the second layer structure is continuous, such that the second layer structure separates the second principal conductor from the first portion of the conductive via.

9. The component as claimed in claim 1 , wherein the second layer structure includes a different material than at least one of the first and second principal conductors.

10. The component as claimed in claim 1 , wherein the second portion of the conductive via conforms to a contour of the concave lower surface of the first portion of the via, the second portion of the via having a recess extending below the second surface of the substrate.

11. The component as claimed in claim 10 , further comprising a barrier layer in contact with an exposed surface of the second portion of the via within the recess, at least part of the barrier layer extending below the second surface of the substrate.

12. The component as claimed in claim 1 , wherein the substrate consists essentially of the dielectric material.

13. The component as claimed in claim 1 , wherein the substrate consists essentially of a semiconductor material, and wherein the dielectric material is a dielectric layer that overlies the semiconductor material within the opening, the dielectric layer defining the inner wall of the opening.

14. The component as claimed in claim 1 , further comprising an electrically conductive contact in contact with the second portion of the via and at least partially overlying a dielectric layer overlying the second surface, the contact being exposed at the second surface of the substrate for interconnection with a device external to the component.

15. The component as claimed in claim 1 , further comprising an additional substrate assembled with the second surface of the substrate, wherein the second portion of the via extends through an aperture extending through a thickness of the additional substrate.

16. The component as claimed in claim 1 , wherein the second layer structure physically contacts the concave lower surface of the first portion of the via.

17. A component, comprising:

a substrate having a first surface, a second surface opposite from the first surface, and an opening extending between the first and second surfaces, the opening having an inner wall extending between the first and second surfaces, a dielectric material being exposed at the inner wall; and

an electrically conductive via, including:

a first portion including a first layer structure extending within the opening and at least partially along the inner wall, the first layer structure including a barrier layer and a seed layer, the barrier layer extending to a first depth below the first surface of the substrate, the seed layer extending to a second depth below the first surface of the substrate, the first depth being greater than the second depth, and a first principal conductor extending within the opening and at least partially overlying the first layer structure within the opening, the first portion being exposed at the first surface and having a lower surface located between the first and second surfaces; and

a second portion including a second layer structure extending within the opening and at least partially along the lower surface of the first portion, and a second principal conductor extending within the opening and at least partially overlying the second layer structure within the opening, the second principal conductor extending from the second layer structure towards the second surface, the second portion being exposed at the second surface.

18. The component as claimed in claim 17 , wherein the second layer structure physically contacts the concave lower surface of the first portion of the via.

Assignments (7)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073689/0793 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0661 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2013
From: UZOH, CYPRIAN EMEKA
To: INVENSAS CORPORATION
Reel/Frame 030407/0175 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2013
From: UZOH, CYPRIAN EMEKA
To: INVENSAS CORPORATION
Reel/Frame 030379/0927 →