Ultraviolet reflective contact

1. A contact comprising:

an ohmic layer, wherein the ohmic layer is transparent to radiation having a target wavelength, wherein the ohmic layer includes a plurality of islands, and wherein an average distance between the plurality of islands is less than a current spreading length of a semiconductor layer adjacent to the contact; and

a reflective layer located on the ohmic layer, wherein the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength, and wherein the target wavelength is within a range of wavelengths between approximately 260 and approximately 360 nanometers.

2. The contact of claim 1 , further comprising an ohmic protective layer located between the ohmic layer and the reflective layer, wherein the ohmic protective layer is configured to prevent diffusion of the reflective layer into the ohmic layer.

3. The contact of claim 2 , wherein the ohmic protective layer comprises rhodium.

4. The contact of claim 1 , further comprising a conductive layer located on the reflective layer, wherein the conductive layer is formed of a material having a high electrical conductivity.

5. The contact of claim 4 , further comprising a reflector protective layer located between the reflective layer and the conductive layer, wherein the reflector protective layer is configured to prevent diffusion of the conductive layer into the reflective layer.

6. The contact of claim 4 , further comprising a dielectric adhesion layer located on the conductive layer, wherein the dielectric adhesion layer is configured to promote adhesion of an insulating dielectric film to the contact.

7. The contact of claim 1 , wherein the ohmic layer is formed of at least two metals.

8. The contact of claim 7 , wherein the ohmic layer has a delta composition profile.

9. A device comprising:

a first semiconductor layer; and

a contact to the first semiconductor layer, wherein the contact includes:

an ohmic layer, wherein the ohmic layer is transparent to radiation having a target wavelength, wherein the ohmic layer includes a plurality of islands, and wherein an average distance between the plurality of islands is less than a current spreading length of the first semiconductor layer; and

a reflective layer located on the ohmic layer, wherein the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength, and wherein the target wavelength is within a range of wavelengths between approximately 260 and approximately 360 nanometers.

10. The device of claim 9 , the contact further including an ohmic protective layer located between the ohmic layer and the reflective layer, wherein the ohmic protective layer is configured to prevent diffusion of the reflective layer into the ohmic layer.

11. The device of claim 9 , the contact further including a conductive layer located on the reflective layer, wherein the conductive layer is formed of a material having a high electrical conductivity.

12. The device of claim 9 , wherein the ohmic layer partially penetrates the first semiconductor layer.

13. The device of claim 9 , wherein the reflective layer is interspersed with the plurality of islands of the ohmic layer.

14. The device of claim 9 , wherein the ohmic layer is formed of a first sub-layer of a first metal and a second sub-layer of a second metal distinct from the first metal.

15. The device of claim 9 , further comprising a second semiconductor layer located between the first semiconductor layer and the contact, wherein the second semiconductor layer has a band gap narrower than a band gap of the first semiconductor layer, and wherein the second semiconductor layer has a thickness less than approximately fifty nanometers.

16. The device of claim 15 , wherein the first and second semiconductor layer are formed of group III nitride materials, and wherein the second semiconductor layer has a gallium content of at least eighty percent.

17. The device of claim 9 , wherein a surface of the semiconductor layer below the contact is patterned, wherein the pattern has a nanoscale characteristic size.

18. The device of claim 9 , wherein the first semiconductor layer has at least one of: a laterally inhomogeneous electrical conductivity or a laterally inhomogeneous reflectivity.

19. A device comprising:

a first group III nitride semiconductor layer;

a second group III nitride semiconductor layer located on the first semiconductor layer, wherein the second semiconductor layer has a band gap narrower than a band gap of the first semiconductor layer, and wherein the second semiconductor layer has a thickness less than approximately fifty nanometers; and

a contact located on the second semiconductor layer, wherein the contact includes:

an ohmic layer, wherein the ohmic layer is transparent to radiation having a target wavelength, wherein the ohmic layer includes a plurality of islands, and wherein an average distance between the plurality of islands is less than a current spreading length of the second group III nitride semiconductor layer; and

a reflective layer located on the ohmic layer, wherein the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength, and wherein the target wavelength is within a range of wavelengths between approximately 260 and approximately 360 nanometers.

20. The device of claim 19 , the contact further including a conductive layer located on the reflective layer, wherein the conductive layer is formed of a material having a high electrical conductivity.

21. The device of claim 19 , wherein the device is configured to operate as a deep ultraviolet light emitting device.