Methods of selectively removing a substrate material
A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF 6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
1. A method for selectively removing substrate material, the method comprising:
oxidizing a semiconductor structure comprising a substrate and at least one copper feature to form a copper oxide material on the at least one copper feature; and
removing a portion of the substrate using an etchant comprising sulfur hexafluoride (SF 6 ) without forming copper sulfide on the at least one copper feature and without removing the copper oxide material on the at least one copper feature.
2. The method of claim 1 , wherein oxidizing a semiconductor structure comprises exposing the semiconductor structure to a plasma selected from the group consisting of an oxygen plasma and an ozone plasma.
3. The method of claim 1 , wherein oxidizing a semiconductor structure comprises exposing the semiconductor structure to a hydrogen peroxide solution.
4. The method of claim 1 , wherein oxidizing a semiconductor structure comprising a substrate and at least one copper feature comprises oxidizing a silicon-containing substrate and the at least one copper feature to form a silicon oxide material on exposed portions of the silicon-containing substrate and the copper oxide material on exposed portions of the at least one copper feature.
5. A method for selectively removing material from a substrate, the method comprising:
subjecting a semiconductor structure comprising a substrate, at least one copper feature, and an insulating component between the substrate and the at least one copper feature to an oxidizing agent to form a silicon oxide material on the substrate and a copper oxide material on the at least one copper feature;
removing the silicon oxide material to expose the substrate; and
removing at least a portion of the substrate using a SF 6 -containing etchant without removing the copper oxide material and the insulating component.
6. The method of claim 5 , wherein the insulating component comprises an insulating material.
7. The method of claim 6 , wherein the insulating component further comprises a diffusion barrier material.
8. The method of claim 5 , wherein the at least one copper feature comprises at least one through-silicon via filled with copper.
9. A method for selectively removing material from a substrate, the method comprising:
exposing a semiconductor structure comprising a silicon-containing material, at least one copper-filled through-substrate via and an insulating material and a diffusion barrier material between the silicon-containing material and copper of the at least one copper-filled through-substrate via to an oxidizing agent to form a copper oxide material on the at least one copper-filled through-substrate via;
selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant to form the at least one copper-filled through-substrate via extending above a surface of the silicon-containing material; and
after selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant, removing the copper oxide material.
10. The method of claim 9 , wherein selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant comprises etching the portion of the silicon-containing material without substantially etching the copper oxide material, the insulating material, and the diffusion barrier material.
11. The method of claim 9 , wherein exposing a semiconductor structure comprising a silicon-containing material, an insulating material, a diffusion barrier material, and at least one copper-filled through-substrate via to an oxidizing agent comprises oxidizing the silicon-containing material and the copper with a plasma comprising the oxidizing agent.
12. The method of claim 9 , further comprising, before selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant, removing an oxide material on a surface of the silicon-containing material.
13. The method of claim 9 , wherein selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant comprises removing from about 2 microns to about 10 microns of the silicon-containing material.
14. The method of claim 9 , wherein exposing a semiconductor structure comprising a silicon-containing material, an insulating material, a diffusion barrier material, and at least one copper-filled through-substrate via to an oxidizing agent comprises exposing the silicon-containing material and the at least one copper-filled through-substrate via to an O 2 plasma.
15. The method of claim 9 , wherein selectively removing a portion of the silicon-containing material with a SF 6 -containing etchant to form the at least one copper-filled through-substrate via extending above a surface of the silicon-containing material comprises recessing an upper surface of the silicon-containing material.