IP Library Granted Patent US 9,231,060
Granted Patent B2
US 9,231,060 · App. 13/713,567 · Granted Jan 5, 2016

Eptaxial structure

Inventors: Yang Wei (Beijing, CN); Shou-Shan Fan (Beijing, CN)
Assignees: Tsinghua University; HON HAI PRECISION INDUSTRY CO., LTD.
H01L29/267H01L21/0237H01L21/02439H01L21/02444H01L21/02502H01L21/02513H01L21/02521H01L21/02658H01L29/1606
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Quick Facts
Patent No.
US 9,231,060
App. No.
13/713,567
Granted
Jan 5, 2016
Kind
B2
Abstract

An epitaxial structure includes a substrate having an epitaxial growth surface, a first epitaxial layer, a graphene layer and a second epitaxial layer. The first epitaxial layer is stacked on the epitaxial growth surface. The graphene layer is coated on the first epitaxial layer. The second epitaxial layer is located on the first epitaxial layer and covers the graphene layer.

Claims (31)

1. An epitaxial structure, comprising:

a substrate having an epitaxial growth surface;

a first epitaxial layer on the epitaxial growth surface;

a graphene layer on the first epitaxial layer, wherein the graphene layer defines a plurality of apertures to exposed a part of a surface of the first epitaxial layer, and the plurality of apertures are formed by photocatalytic titanium oxide cutting; and

a second epitaxial layer on the first epitaxial layer and covering the graphene layer, wherein the second epitaxial layer is located on the graphene layer and contacts the first epitaxial layer by extending through the plurality of apertures.

2. The epitaxial structure of claim 1 , wherein the graphene layer is a graphene structure consisting of graphene.

3. The epitaxial structure of claim 2 , wherein the graphene structure comprises a graphene film consisting of a single layer of continuous carbon atoms.

4. The epitaxial structure of claim 3 , wherein the graphene layer has a thickness same as a single carbon atom.

5. The epitaxial structure of claim 1 , wherein a thickness of the graphene layer is in a range from about 1 nanometer to about 100 micrometers.

6. The epitaxial structure of claim 1 , wherein sizes of the plurality of apertures are in a range from about 10 nanometers to about 10 micrometers.

7. The epitaxial structure of claim 1 , wherein a dutyfactor of the graphene layer is in a range from about 1:100 to about 100:1, wherein the dutyfactor is an area ratio between a covered part to the exposed part of the epitaxial growth surface.

8. The epitaxial structure of claim 1 , wherein a material of the first epitaxial layer is same as a material of the second epitaxial layer, and the first epitaxial layer and the second epitaxial layer are an integrated structure.

9. The epitaxial structure of claim 8 , wherein the graphene layer is embedded into the integrated structure.

10. The epitaxial structure of claim 1 , wherein the graphene layer comprises a plurality of graphene strips spaced from each other, and an aperture is defined between each adjacent two of the plurality of graphene strips.

11. The epitaxial structure of claim 1 , wherein the graphene layer is a coating comprises graphene powders.

12. The epitaxial structure of claim 1 , wherein a material of the first epitaxial layer is semiconductor, metal or alloy.

13. The epitaxial structure of claim 1 , wherein a material of the substrate is GaAs, GaN, AlN, Si, SOI, SiC, MgO, ZnO, LiGaO 2 , LiAlO 2 , or Al 2 O 3 .

14. The epitaxial structure of claim 1 , wherein the second epitaxial layer defines a plurality of holes, and the graphene layer is received into the plurality of holes.

15. An epitaxial structure, comprising:

a substrate having an epitaxial growth surface;

a first epitaxial layer on the epitaxial growth surface;

a graphene layer on the first epitaxial layer, wherein the graphene layer is a patterned structure, and the graphene layer is patterned by photocatalytic titanium oxide cutting; and

a second epitaxial layer on the first epitaxial layer and covering the graphene layer;

wherein the second epitaxial layer defines a plurality of holes, and the graphene layer is received into the plurality of holes.

16. The epitaxial structure of claim 1 , wherein the plurality of apertures are formed by:

making a patterned titanium dioxide layer;

contacting the patterned titanium dioxide layer with the graphene layer;

irradiating the patterned titanium dioxide layer with ultraviolet light; and

removing the patterned titanium dioxide layer.

17. The epitaxial structure of claim 16 , wherein the step of making a patterned titanium dioxide layer comprises depositing titanium on a patterned carbon nanotube structure to obtain a patterned metal titanium layer and oxidizing the patterned metal titanium layer.

18. The epitaxial structure of claim 17 , wherein the patterned carbon nanotube structure is a carbon nanotube film or a plurality of carbon nanotube wires.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2012
From: WEI, YANG; FAN, SHOU-SHAN
To: TSINGHUA UNIVERSITY; HON HAI PRECISION INDUSTRY CO., LTD.
Reel/Frame 029463/0735 →
Priority Claims (1)
CN 2012 1 0122545 · Apr 25, 2012 · national
Continuity (1)
Related Publication 20130285115A1 · Oct 31, 2013