Piezoelectric generator and method of manufacturing the same
Provided are flexible piezoelectric generators and methods of manufacturing the same. The piezoelectric generator includes a first insulation layer disposed on a first electrode, a piezoelectric structure disposed on the first insulation layer, a second insulation layer disposed on the piezoelectric structure, and a second electrode disposed on the second insulation layer.
1. A piezoelectric generator comprising:
a first electrode;
a first insulation layer disposed on the first electrode;
a piezoelectric structure disposed on the first insulation layer and including a material generating piezoelectric potential at both ends of the piezoelectric structure by deformation;
a second insulation layer disposed on the piezoelectric structure; and
a second electrode disposed on the second insulation layer.
2. The piezoelectric generator of claim 1 , wherein the first electrode is a flexible and conductive substrate.
3. The piezoelectric generator of claim 2 , wherein the first electrode is a metal substrate or a conductive polymer substrate.
4. The piezoelectric generator of claim 3 , wherein the metal substrate comprises at least one of Al (aluminum), Cu (copper), Au (gold), and Ag (silver).
5. The piezoelectric generator of claim 2 , wherein the first electrode has a thickness of about 500 μm or less.
6. The piezoelectric generator of claim 1 , wherein the first electrode is disposed on a flexible plastic substrate.
7. The piezoelectric generator of claim 6 , wherein the first electrode comprises metal, a conductive polymer, or graphene.
8. The piezoelectric generator of claim 6 , wherein the plastic substrate has a thickness of about 500 μm or less.
9. The piezoelectric generator of claim 1 , wherein the first and the second insulation layers comprise a polymer.
10. The piezoelectric generator of claim 9 , wherein the first and the second insulation layers comprise polymethyl methacrylate.
11. The piezoelectric generator of claim 1 , wherein the first and the second insulation layers have a thickness of about 2 μm or less.
12. The piezoelectric generator of claim 1 , wherein the piezoelectric structure comprises a plurality of piezoelectric nanowires.
13. The piezoelectric generator of claim 12 , wherein the piezoelectric nanowires comprise ZnO, ZnSnO 3 , or SnO.
14. The piezoelectric generator of claim 12 , wherein a seed layer is further disposed between the first insulation layer and the piezoelectric nanowires.
15. The piezoelectric generator of claim 14 , wherein the seed layer comprises at least one of ZnO, Zn, ZnSnO 3 , SnO, Sn, and Au.
16. The piezoelectric generator of claim 1 , wherein the piezoelectric structure comprises a piezoelectric thin film.
17. The piezoelectric generator of claim 16 , wherein the piezoelectric thin film comprises ZnO, ZnSnO 3 , SnO, BaTiO 3 , NaNbO 3 , PZT, or PVDF.