Methods of forming a semiconductor device
Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.
1. A method of forming a semiconductor device comprising:
forming sacrificial layers and insulating layers that are alternately and repeatedly stacked on a substrate;
forming a channel opening penetrating the sacrificial layers and the insulating layers, the channel opening exposing a top surface of the substrate;
forming a first semiconductor pattern conformally covering an inner sidewall of the channel opening;
forming an insulation pattern on the first semiconductor pattern and in the channel opening;
forming a second semiconductor pattern on the insulation pattern to substantially fill the channel opening;
injecting dopants into the first semiconductor pattern; and
melting a portion of the first semiconductor pattern adjacent an uppermost one of the sacrificial layers to form a third semiconductor pattern.
2. The method of claim 1 , wherein melting the portion of the first semiconductor pattern comprises performing a laser thermal treating process.
3. The method of claim 1 , wherein forming the third semiconductor pattern further comprises re-crystallizing the melted first semiconductor pattern.
4. The method of claim 3 , wherein:
the dopants comprise first conductivity type dopants; and
the method further comprises injecting second conductivity type dopants into the second semiconductor pattern after re-crystallizing the melted first semiconductor pattern.
5. The method of claim 1 , wherein:
the dopants comprise first conductivity type dopants; and
the method further comprises injecting second conductivity type dopants into the second semiconductor pattern after injecting the first conductivity type dopants into the portion of the first semiconductor pattern and before melting the portion of the first semiconductor pattern.
6. The method of claim 1 , wherein a grain size of the third semiconductor pattern is greater than a grain size of the first semiconductor pattern.
7. The method of claim 1 , further comprising:
conformally forming a data storage layer covering the inner sidewall of the channel opening before forming the first semiconductor pattern.
8. The method of claim 1 , after forming the third semiconductor pattern, further comprising:
successively patterning the insulating layers and the sacrificial layers to form trenches exposing top surfaces of the substrate on opposing sides of the channel opening;
removing the sacrificial layers exposed by the trenches to form recess regions;
forming a data storage layer covering inner surfaces of the recess regions; and
forming gate conductive patterns respectively filling the recess regions.
9. The method of claim 8 , wherein the recess regions expose a portion of the first semiconductor pattern and a portion of the third semiconductor pattern, respectively.
10. The method of claim 8 , wherein a portion of the third semiconductor pattern is exposed by an uppermost one of the recess regions.
11. A method of forming a semiconductor device comprising:
forming first and second layers that are alternately and repeatedly stacked on a substrate;
forming an opening penetrating the first and second layers;
forming a first semiconductor pattern in the opening;
forming an insulation pattern on the first semiconductor pattern;
forming a second semiconductor pattern on the insulation pattern;
providing dopants in the first semiconductor pattern; and
thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern that includes a substantially uniform distribution of the dopants.
12. The method of claim 11 , wherein the distribution of the dopants in the third semiconductor pattern is more uniform than a distribution of the dopants in the portion of the first semiconductor pattern before thermally treating the portion of the first semiconductor pattern.
13. The method of claim 12 , wherein the third semiconductor pattern is configured to provide a channel region of an adjacent transistor.
14. The method of claim 13 , wherein the third semiconductor pattern is adjacent at least a portion of uppermost ones of the first and second layers, respectively.
15. The method of claim 14 , wherein the uppermost one of the first layers comprises a gate electrode of the adjacent transistor.
16. The method of claim 11 , wherein the first and second layers comprise sacrificial layers and insulating layers, respectively.
17. The method of claim 11 , wherein the first and second layers comprise data storage layers and insulating layers, respectively.
18. The method of claim 11 , further comprising removing an upper portion of the insulation pattern before forming the second semiconductor pattern.
19. The method of claim 11 , wherein;
the dopants comprise first conductivity type dopants; and
the method further comprises forming a conductive pad by providing second conductivity type dopants in the second semiconductor pattern.
20. The method of claim 11 , wherein:
thermally treating the portion of the first semiconductor pattern comprises melting the portion of the first semiconductor pattern; and
forming the third semiconductor pattern further comprises re-crystallizing the melted portion of the first semiconductor pattern.