Non-crystalline inorganic light emitting diode
View Patent ↗Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier.
1. An article of manufacture comprising:
a light emitting device comprising:
a first diode unit comprising:
a first non-crystalline inorganic light emission layer configured to
emit light of a first wavelength;
first and second non-crystalline inorganic charge transport layers surrounding said first light emission layer;
a second diode unit comprising:
a second non-crystalline inorganic light emission layer configured to emit light of a second wavelength;
third and fourth non-crystalline inorganic charge transport layers surrounding said second light emission layer;
a non-crystalline inorganic charge generation layer between said first and second diode units,
wherein an anode terminal of said first diode unit is coupled to a cathode terminal of said second anode unit, and
wherein said first and second diode units and said charge generation layer form a single stack of materials.
2. The article of manufacture of claim 1 wherein said first and second wavelengths are substantially the same, and the light output is increased at said substantially the same wavelength.
3. The article of manufacture of claim 1 wherein said first and second wavelengths are substantially different.
4. The article of manufacture of claim 1 further comprising: a third diode unit configured to emit light of a third wavelength; and
a second non-crystalline inorganic charge generation layer between said second and third diode units, wherein said light emitting device is configured to produce white light.
5. The article of manufacture of claim 1 further comprising electronics to convert a source of alternating current to direct current for use by said light emitting diodes; and a base to couple said electronics to said source of alternating current.
6. The article of manufacture of claim 1 wherein said light emission layers are amorphous.
7. The article of manufacture of claim 1 wherein said charge transport layers have a thickness greater than 4.0 nm.
8. The article of manufacture of claim 1 wherein said charge transport layers are configured to conduct at least one type of charge carrier.
9. The article of manufacture of claim 1 further comprising a substrate configured to support said light emitting diode.
10. The article of manufacture of claim 9 wherein said substrate conducts current to said light emitting diode.
11. The article of manufacture of claim 9 wherein said substrate comprises metal.
12. The article of manufacture of claim 9 wherein said substrate comprises a polymer.
13. The article of manufacture of claim 9 wherein said substrate is configured to be flexible when said light emitting diode is functioning.
14. The article of manufacture of claim 9 wherein said substrate with said light emitting diode applied is adaptable to a non-planar configuration.
15. The article of manufacture of claim 1 further comprising electronics to convert a source of alternating current to direct current for use by said light emitting diode; and a base to couple said electronics to said source of alternating current.
16. The article of manufacture of claim 1 comprising a single said light emitting diode of greater than 4 square centimeters.
17. A light emitting device comprising:
a first diode unit comprising:
a first non-crystalline inorganic light emission layer configured to emit light of a first wavelength;
first and second non-crystalline inorganic charge transport layers surrounding said first light emission layer;
a second diode unit comprising:
a second non-crystalline inorganic light emission layer configured to emit light of a second wavelength;
third and fourth non-crystalline inorganic charge transport layers surrounding said second light emission layer;
a non-crystalline inorganic charge generation layer between said first and second diode units,
wherein an anode terminal of said first diode unit is coupled to a cathode terminal of said second anode unit, and
wherein said first and second diode units and said charge generation layer form a single stack of materials.
18. The light emitting device of claim 17 wherein said first and second wavelengths are substantially the same, and the light output is increased at said substantially the same wavelength.
19. The article of manufacture of claim 17 wherein said first and second wavelengths are substantially different.