In-place change between transient and persistent state for data structures on non-volatile memory
Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed.
1. An apparatus comprising:
controller logic to control access to one or more non-volatile memory devices;
a storage unit to store a bit to indicate whether a first portion of the one or more non-volatile memory devices has one of a persistent state and a transient state,
wherein the controller logic is capable to cause a change in a state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state without movement of data stored in the first portion of the one or more non-volatile memory devices and without partition of the one or more non-volatile memory devices into volatile and persistent regions.
2. The apparatus of claim 1 , wherein the one or more non-volatile memory devices are to comprise one or more of: flash memory, Phase Change Memory (PCM), 3D (3-Dimensional) Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
3. The apparatus of claim 1 , wherein the first portion is to comprise one or more bits of data.
4. The apparatus of claim 1 , wherein the bit is to be stored in the one or more non-volatile memory devices.
5. The apparatus of claim 1 , wherein the controller logic is to cause removal of the data stored in the first portion of the one or more non-volatile memory devices and the bit stored in the storage unit in response to detection of an abnormal event and a determination that the bit and the first portion are associated.
6. The apparatus of claim 1 , wherein the controller logic is to cause a change to a state of the bit to modify the state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state and without moving the data stored in the first portion of the one or more non-volatile memory devices.
7. The apparatus of claim 1 , wherein the one or more non-volatile memory devices are on a same integrated circuit die.
8. The apparatus of claim 1 , wherein one or more of the controller logic, a memory, the one or more non-volatile memory devices, and a processor core are on a same integrated circuit die.
9. The apparatus of claim 1 , wherein a memory controller is to comprise the controller logic.
10. The apparatus of claim 1 , wherein the storage unit is to comprise a register.
11. A method comprising:
controlling access to one or more non-volatile memory devices via controller logic;
storing a bit in a storage unit to indicate whether a first portion of the one or more non-volatile memory devices has one of a persistent state and a transient state,
wherein the controller logic is capable to cause a change in a state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state without moving data stored in the first portion of the one or more non-volatile memory devices and without partitioning the one or more non-volatile memory devices into volatile and persistent regions.
12. The method of claim 11 , wherein the one or more non-volatile memory devices comprise one or more of: flash memory, Phase Change Memory (PCM), 3D Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
13. The method of claim 11 , wherein the first portion comprises one or more bits of data.
14. The method of claim 11 , further comprising storing the bit in the one or more non-volatile memory devices.
15. The method of claim 11 , further comprising causing removal of the data stored in the first portion of the one or more non-volatile memory devices and the bit stored in the storage unit in response to detection of an abnormal event and a determination that the bit and the first portion are associated.
16. The method of claim 11 , further comprising causing a change to a state of the bit to modify the state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state and without moving the data stored in the first portion of the one or more non-volatile memory devices.
17. The method of claim 11 , wherein the one or more non-volatile memory devices are on a same integrated circuit die.
18. The method of claim 11 , wherein one or more of the controller logic, a memory, the one or more non-volatile memory devices, and a processor core are on a same integrated circuit die.
19. The method of claim 11 , further comprising storing the bit in a register.
20. A system comprising:
one or more non-volatile memory devices;
a processor to access data stored on the one or more non-volatile memory devices via a controller logic;
the controller logic to control access to the one or more non-volatile memory devices;
a storage unit to store a bit to indicate whether a first portion of the one or more non-volatile memory devices has one of a persistent state and a transient state,
wherein the controller logic is capable to cause a change in a state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state without movement data stored in the first portion of the one or more non-volatile memory devices and without partition of the one or more non-volatile memory devices into volatile and persistent regions.
21. The system of claim 20 , wherein the one or more non-volatile memory devices are to comprise one or more of: flash memory, Phase Change Memory (PCM), 3D Cross Point Memory, Resistive Random Access Memory, and Spin Torque Transfer Random Access Memory (STTRAM).
22. The system of claim 20 , wherein the first portion is to comprise one or more bits of data.
23. The system of claim 20 , wherein the bit is to be stored in the one or more non-volatile memory devices.
24. The system of claim 20 , wherein the controller logic is to cause removal of the data stored in the first portion of the one or more non-volatile memory devices and the bit stored in the storage unit in response to detection of an abnormal event and a determination that the bit and the first portion are associated.
25. The system of claim 20 , wherein the controller logic is to cause a change to a state of the bit to modify the state of the first portion of the one or more non-volatile memory devices between the persistent state and the transient state and without moving the data stored in the first portion of the one or more non-volatile memory devices.
26. The system of claim 20 , wherein the one or more non-volatile memory devices are on a same integrated circuit die.
27. The system of claim 20 , wherein one or more of the controller logic, a memory, the one or more non-volatile memory devices, and a processor core are on a same integrated circuit die.
28. The system of claim 20 , wherein a memory controller is to comprise the controller logic.
29. The system of claim 20 , further comprising an audio device.
30. The system of claim 20 , wherein the storage unit is to comprise a register.