Composite heat-dissipation substrate and manufacturing method of the same
View Patent ↗The present disclosure provides a composite heat-dissipation substrate and a method of manufacturing the same. The composite heat-dissipation substrate includes a first ceramic layer having insulating properties, a second porous ceramic layer and a metal layer, wherein the first ceramic layer and the second ceramic layer are continuously connected to each other so as not to form an interface therebetween, and the metal layer is infiltrated into plural pores of the second ceramic layer to be coupled to the ceramic layers, whereby interfacial coupling force between the ceramic layers and the metal layer is very high, thereby providing significantly improved heat dissipation characteristics.
1. A method of manufacturing a composite heat-dissipation substrate, comprising:
i) preparing a first ceramic powder having insulating properties;
ii) stacking a powder mixture of a second ceramic powder and a pore forming material on the first ceramic powder;
iii) forming a porous ceramic structure by evaporating the pore forming material and sintering the first ceramic powder and the powder mixture; and
iv) infiltrating a molten metal into plural pores formed in the porous ceramic structure to be impregnated into the porous ceramic structure.
2. The method according to claim 1 , wherein the first ceramic layer and the second ceramic layer have a thermal conductivity of 1 W/m·K or more at room temperature.
3. The method according to claim 2 , wherein the ceramic material comprises at least one selected from carbides such as SiC and B 4 C, oxides such as Al 2 O 3 , MgO and SiO 2 , and nitrides such as AlN, Si 3 N 4 and BN.
4. The method according to claim 1 , wherein the first ceramic layer and the second ceramic layer comprise a ceramic material having a coefficient of thermal expansion of 12×10 −6 or less and an insulation resistance of 10 5 Ωcm or more.
5. The method according to claim 1 , wherein the pore forming material is evaporated at a temperature less than or equal to a sintering temperature of the first and second ceramic powders.
6. The method according to claim 1 , wherein the metal layer comprises a metal having a thermal conductivity of 50 W/m·K or more at room temperature.
7. The method according to claim 6 , wherein the metal comprises at least one selected from Al, Al alloys, Mg, Mg alloys, Cu and Cu alloys.
8. The method according to claim 1 , wherein the sintering temperature ranges from 1000° C. to 1800° C.
9. The method according to claim 1 , wherein the squeeze infiltrating is performed at a temperature 30˜200° C. higher than the melting point of the metal and at a pressure of 60 MPa or less.