Method of making a multilayer structure
A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
1. A method of making a multilayer structure comprising steps of:
providing a continuous light-emitting layer having a first greatest width;
attaching a layer comprising a metallic element absent from the continuous light-emitting layer and oxygen, which has a second greatest width greater than the first greatest width, to the continuous light-emitting layer; and
forming a first electrode on the layer which is not covered by the continuous light-emitting layer.
2. The method of claim 1 , further comprising a step of:
providing a first substrate configured to support the continuous light-emitting layer before attaching the layer to the continuous light-emitting layer.
3. The method of claim 2 , further comprising a step of:
removing the first substrate.
4. The method of claim 1 , further comprising a step of:
providing a second substrate configured to support the continuous light-emitting layer and the layer.
5. The method of claim 1 , further comprising a step of:
forming a second electrode on the continuous light-emitting layer.
6. The method of claim 1 , further comprising a step of:
providing a semiconductor layer configured to be directly connected to the layer and electrically connected to the continuous light-emitting layer.
7. A method of making a multilayer structure comprising steps of:
providing a continuous light-emitting layer having a first greatest width;
attaching an oxide layer, which comprises a metallic element absent from the continuous light-emitting layer and has a second greatest width greater than the first greatest width, to the continuous light-emitting layer; and
forming a first electrode on the oxide layer which is not covered by the continuous light-emitting layer.
8. The method of claim 7 , further comprising a step of:
providing a first substrate configured to support the continuous light-emitting layer before attaching the oxide layer to the continuous light-emitting layer.
9. The method of claim 8 , further comprising a step of:
removing the first substrate.
10. The method of claim 7 , further comprising a step of:
providing a second substrate configured to support the continuous light-emitting layer and the oxide layer.
11. The method of claim 7 , further comprising a step of:
forming a second electrode on the continuous light-emitting layer.
12. The method of claim 7 , further comprising a step of:
providing a semiconductor layer configured to be directly connected to the oxide layer and electrically connected to the light-emitting layer.
13. A method of making a multilayer structure comprising steps of:
providing a first substrate;
providing a continuous semiconductor layer, which has a first greatest width, on the first substrate;
attaching a conductive layer, which comprises a metallic element absent from the continuous semiconductor layer and has a second greatest width greater than the first greatest width, to the continuous semiconductor layer; and
removing the first substrate.
14. The method of claim 13 , wherein the step of providing the continuous semiconductor layer comprises a step of growing the continuous semiconductor layer on the first substrate.
15. The method of claim 13 , wherein the step of attaching the conductive layer to the continuous semiconductor layer comprises a step of directly connecting the conductive layer with the continuous semiconductor layer.
16. The method of claim 13 , further comprising a step of:
providing a first electrode on the conductive layer which is not covered by the continuous semiconductor layer.
17. The method of claim 13 , further comprising a step of:
providing a second electrode on the continuous semiconductor layer.
18. The method of claim 13 , further comprising a step of:
providing a second substrate configured to support the continuous semiconductor layer and the conductive layer.
19. The method of claim 13 , further comprising a step of:
providing a second substrate before attaching the conductive layer to the continuous semiconductor layer.
20. The method of claim 13 , further comprising a step of:
providing a light-emitting layer on the continuous semiconductor layer.