Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods

1. An engineered substrate assembly, comprising:

a substrate material;

a defect mitigation material on the substrate material, wherein the defect mitigation material has a front surface with intra-granular roughness and defects interspersed throughout, and wherein the defects are larger than the intra-granular roughness;

a shear strength enhancement material on the front surface of the defect mitigation material, wherein the shear strength enhancement material comprises a refractory metal and a metal nitride, and wherein the shear strength enhancement material is configured to bridge the defects in the front surface of the defect mitigation material;

a bonding material between the shear strength enhancement material and the defect mitigation material, wherein the bonding material is configured to form an oxide bond with the defect mitigation material; and

an epitaxial formation structure on the shear strength enhancement material.

2. The engineered substrate assembly of claim 1 , wherein

the substrate material comprises a polycrystalline ceramic;

the defect mitigation material comprises an oxide material;

the refractory metal and/or the metal nitride having a shear modulus of at least 160 GPa; and

the epitaxial formation structure comprises silicon having a Si(1,1,1) crystal orientation.

3. The engineered substrate assembly of claim 1 , wherein the shear strength enhancement material comprises at least one of titanium nitride, tungsten, tungsten nitride, aluminum nitride, and titanium aluminide.

4. The engineered substrate assembly of claim 1 wherein

the substrate material comprises a polycrystalline ceramic; and

the epitaxial formation structure comprises single crystal silicon.

5. The engineered substrate assembly of claim 1 , wherein the bonding material is configured to grow native oxides to bond to the defect mitigation material.

6. The engineered substrate assembly of claim 1 , further comprising:

a first semiconductor material formed on the epitaxial formation structure, the first semiconductor material comprising N-type gallium nitride (GaN);

an active region on the first semiconductor material, the active region comprising at least one of a bulk indium gallium nitride (InGaN), an InGaN single quantum well, and GaN/InGaN multiple quantum wells; and

a second semiconductor material on the active region, the second semiconductor material comprising P-type GaN.

7. A substrate assembly, comprising:

a donor substrate having a front surface, wherein the donor substrate includes an epitaxial growth material;

a shear strength enhancement material on the front surface of the donor substrate, wherein the shear strength enhancement material comprises a refractory metal and a metal nitride having a shear modulus of at least 160 GPa;

a bonding material spaced apart from the front surface of the donor substrate by the shear strength enhancement material, wherein the bonding material is configured to grow native oxides; and

a defect mitigation material in contact with the bonding material, wherein the defect mitigation material has a front surface with intra-granular roughness and defects interspersed throughout, and wherein the defects are larger than the intra-granular roughness.

8. The substrate assembly of claim 7 , wherein the donor substrate comprises a single crystal silicon.

9. The substrate assembly of claim 7 , wherein the shear strength enhancement material comprises at least one of titanium nitride, tungsten, tungsten nitride, aluminum nitride, and titanium aluminide.

10. The substrate assembly of claim 7 , wherein the bonding material comprises an amorphous polymer.

11. A light emitting diode (LED) device, comprising:

an engineered substrate including a substrate material, a defect mitigation material on the substrate material, wherein the defect mitigation material has a front surface with intra-granular roughness and defects interspersed throughout, and wherein the defects are larger than the intra-granular roughness, a shear strength enhancement structure on the defect mitigation material, and an epitaxial formation structure on the shear strength enhancement structure, wherein the shear strength enhancement structure includes a shear strength enhancement material comprising a refractory metal and a metal nitride;

a bonding material in direct contact with the shear strength enhancement material and the defect mitigation material, wherein the bonding material is an amorphous polymer; and

an LED structure on the epitaxial formation structure.

12. The LED device of claim 11 , wherein the defect mitigation material comprises an oxide material.

13. The LED device of claim 11 , wherein the shear strength enhancement material comprises at least one of titanium, tungsten, and titanium aluminide.

14. The LED device of claim 11 , wherein the shear strength enhancement material has a shear modulus of about 160-200 GPa.

15. The LED device of claim 11 , wherein the substrate material comprises at least one of a polycrystalline ceramic material and a silicon material.

16. The LED device of claim 11 , wherein the epitaxial formation structure comprises single crystal silicon.

17. The LED device of claim 11 , wherein

the epitaxial formation structure comprises silicon having a Si(1,1,1) crystal orientation; and

the LED structure comprises:

a first semiconductor material formed on the epitaxial formation structure, the first semiconductor material comprising N-type gallium nitride (GaN),

an active region on the first semiconductor material, the active region comprising at least one of a bulk indium gallium nitride (InGaN), an InGaN single quantum well, and GaN/InGaN multiple quantum wells, and

a second semiconductor material on the active region, the second semiconductor material comprising P-type GaN.

18. The LED device of claim 11 , wherein the shear strength enhancement material has a thickness of about 250-50,000 Å.