IP Library › Granted Patent US 9,431,714
Granted Patent B2
US 9,431,714 · App. 13/733,164 · Granted Aug 30, 2016

Antenna structures

Inventor: Hsiao-Tsung Yen (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01Q9/16H01Q1/2283H01Q7/00H01Q9/0407H01Q13/106
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Quick Facts
Patent No.
US 9,431,714
App. No.
13/733,164
Granted
Aug 30, 2016
Kind
B2
Abstract

An antenna formed on a semiconductor structure having a substrate with electrical circuits thereon operationally related to the functionality of an antenna and one or more metallic structures formed by a through silicon via, microbump, copper pillar, or redistribution layer proximate to the substrate. The one or more metallic structures form a radiating element of the antenna. Exemplary antennas thus formed can include a slot antenna, a WLAN slot antenna, a planar invented F antenna (PIFA), a spiral antenna, a dipole antenna, a Yagi antenna, a planar dipole antenna, a vertical dipole antenna, a patch antenna, a helical antenna, a loop patch antenna, and combinations thereof.

Claims (48)

1. A semiconductor structure comprising:

a first die including a substrate having electrical circuits thereon operationally related to the functionality of an antenna; and

a planar redistribution layer (RDL) parallel to a top surface of the substrate, the RDL having a planar polygonal antenna patch between the first die and a second die, the polygonal antenna patch parallel to the substrate and having a pair of lines extending away from the polygonal antenna patch on one side thereof, and an edge feed line extending from the one side of the polygonal antenna patch, with a respective inset gap between the edge feed line and each respective line of the pair of lines.

2. The antenna of claim 1 wherein the antenna

the radiating conductive layer comprises at least one slot opening.

3. An antenna formed on a semiconductor structure comprising:

a first die having a semiconductor substrate and electrical circuits thereon operationally related to the functionality of an antenna, the first die having a plurality of metal layers over the substrate and parallel to a face of the substrate,

a redistribution layer that is an additional layer parallel to the substrate and located over the plurality of metal layers;

a second die over the redistribution layer of the first die, the redistribution layer having one or more structures between the first and second dies,

wherein the one or more structures include a planar polygonal patch antenna parallel to the face of the substrate.

4. The antenna of claim 3 , wherein the antenna is a planar invented F antenna (PIFA) further comprising:

a polygonal antenna patch positioned on the substrate having at least one feed pin and at least one shorting pin extending therefrom, the shorting pin used for electrical connection to a grounding layer,

wherein the polygonal antenna patch is formed by the redistribution layer.

5. The antenna of claim 3 , wherein the antenna is a spiral antenna further comprising:

a planar two arm spiral structure having one or more turns and arranged to receive an RF signal,

wherein the two arms are electrically isolated from each other and arranged to define a gap or feed point between the two arms,

and wherein the spiral structure is formed by the redistribution layer.

6. The antenna of claim 3 , wherein the antenna is a dipole antenna comprising:

two metallic structures separated by a feed gap; and

a center feeding element providing radio frequency voltage to the metallic structures via the feed gap,

wherein the metallic structures are formed by the redistribution layer.

7. The antenna of claim 6 wherein the dipole antenna is a planar or vertical dipole antenna.

8. The antenna of claim 6 wherein the dipole antenna is a Yagi antenna and wherein one or more metal layers in adjacent dies form a director or reflector of the Yagi antenna.

9. The antenna of claim 3 , wherein the antenna is a patch antenna comprising:

a polygonal antenna patch positioned on the substrate having a feed element,

wherein the polygonal antenna patch is formed by the redistribution layer.

10. The antenna of claim 9 wherein the polygonal antenna patch is selected from the group consisting of a square patch, rectangular patch, hexagonal patch, pentagonal patch, and multisided patch having one or more gaps.

11. The antenna of claim 3 , further comprising:

a reference conductive layer to emit electromagnetic energy in response to an electrical signal received at the reference conductive layer; and

at least one slot opening,

wherein the radiating conductive layer is formed by the polygonal antenna patch.

12. The antenna of claim 3 , wherein the antenna is a helical antenna further comprising:

a conductive structure wound in the form of a helix having a predetermined diameter and pitch; and

a ground plane,

wherein the conductive structure is formed by the redistribution layer.

13. The antenna of claim 3 , wherein the antenna is a loop patch antenna comprising:

a first planar polygonal patch positioned on the substrate;

a second planar polygonal patch substantially parallel to the first planar patch and separated from the first planar patch by a predetermined distance; and

an excitation port supplying radio frequency energy to the antenna,

wherein the first planar antenna patch is formed by the microbump, through silicon via, copper pillar, or redistribution layer, and

wherein the predetermined distance affects resonant frequency of the loop patch antenna.

14. The antenna of claim 13 wherein the first and second planar patches are positioned on opposing sides of a die.

15. The antenna of claim 3 , wherein the slot antenna is a WLAN slot antenna and the at least one slot opening comprises a plurality of folded slots.

16. The antenna of claim 3 further comprising one or more through silicon vias, a microbump, an array of microbumps, a strip of microbumps, a layer of microbumps, one or more copper pillars, inter-metal layers in an upper or lower chip, and combinations thereof.

17. The antenna of claim 3 wherein the antenna is selected from the group consisting of a slot antenna, a WLAN slot antenna, a planar invented F antenna (PIFA), a spiral antenna, a dipole antenna, a Yagi antenna, a planar dipole antenna, a vertical dipole antenna, a patch antenna, a helical antenna, a loop patch antenna, and combinations thereof.

18. The antenna of claim 3 wherein the one or more structures comprise a material selected from the group consisting of silver, gold, aluminum, rhodium, platinum, nickel, copper, tin, chromium, titanium, tungsten, heavily doped semiconductors, and alloys thereof.

19. The antenna of claim 3 wherein the radiating element has a thickness of about 25 μm or more.

20. The antenna of claim 3 wherein the radiating element radiates at a frequency of greater than 50 GHz.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2013
From: YEN, HSIAO-TSUNG
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 029558/0889 →
Continuity (1)
Related Publication 20140184460A1 · Jul 3, 2014