Non-volatile one-time-programmable and multiple-time programmable memory configuration circuit
View Patent ↗A programmable non-volatile configuration circuit uses a pair of non-volatile memory devices arranged in a pull-up and pull-down arrangement. The non-volatile memory devices have floating gates that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. The invention can be used in environments to store configuration data for programmable logic devices, field programmable arrays, and many other applications.
1. A programmable non-volatile configuration storage bit circuit on a substrate with a logic circuit, the programmable non-volatile circuit comprising:
a first floating gate associated with a first non-volatile device;
a second floating gate associated with a second non-volatile device;
a first drain region associated with said first non-volatile memory device; and
a second drain region associated with said second non-volatile memory device;
wherein the first drain region and the second drain region overlap respective sufficient portions of said first floating gate and said second floating gate to serve as first and second capacitive couplings, respectively, to the first floating gate and the second floating gate, such that a programming voltage applied to said first drain region or said second drain region can be imparted, respectively, to said first floating gate or said second floating gate through the first capacitive coupling or the second capacitive coupling, respectively;
an output coupled to said first non-volatile device and said second non-volatile device;
wherein a value of said output of said programmable non-volatile circuit is based on a programmed state of said first non-volatile device and said second non-volatile memory device and can be used to configure a function to be performed by the logic circuit.
2. The programmable non-volatile circuit of claim 1 wherein the first and second non-volatile devices are re-channel.
3. The programmable non-volatile circuit of claim 1 wherein at least one of said first floating gate and second floating gate is comprised of a material used as a gate for a transistor device situated on the substrate and associated with at least one of a logic gate or a volatile memory.
4. The programmable non-volatile circuit of claim 1 wherein at least one of said first floating gate and second floating gate can be erased.
5. The programmable non-volatile circuit of claim 4 wherein at least one of said first floating gate and second floating gate can be re-programmed.