Light emitting device
Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
1. A light emitting device comprising:
a gallium oxide layer over a gallium oxide substrate;
a gallium nitride layer over the gallium oxide layer; and
a light emitting structure over the gallium nitride layer,
wherein the light emitting structure is directly disposed on the gallium nitride layer, and
wherein the light emitting structure comprises:
a second conductive semiconductor layer over the gallium nitride layer;
an active layer over the second conductive semiconductor layer; and
a first conductive semiconductor layer over the active layer,
wherein the second conductive semiconductor layer is disposed on the gallium nitride layer.
2. The light emitting device of claim 1 , wherein the gallium oxide layer comprise a gallium aluminum oxide layer, and
wherein the gallium oxide layer is directly disposed on the gallium nitride layer.
3. The light emitting device of claim 2 , wherein the gallium aluminum oxide layer comprises Ga x Al y O z (0 x≦1, 0 y≦1, 0 z≦1).
4. The light emitting device of claim 2 , wherein the gallium aluminum oxide layer has a thickness of 1 μm or less.
5. The light emitting device of claim 1 , wherein the gallium nitride layer is inter-disposed between the gallium oxide layer and the light emitting structure.
6. The light emitting device of claim 1 , wherein the gallium oxide layer is directly disposed on the gallium oxide substrate.
7. The light emitting device of claim 1 , wherein the light emitting structure does not contact the gallium oxide layer.
8. The light emitting device of claim 1 , wherein the light emitting structure does not contact the gallium oxide substrate.
9. The light emitting device of claim 1 , wherein a first interfacial adhesion between the gallium oxide layer and the gallium nitride layer is stronger than a second interfacial adhesion between the gallium oxide substrate and the light emitting structure.
10. The light emitting device of claim 1 , wherein the gallium nitride layer comprises a gallium aluminum nitride layer.
11. The light emitting device of claim 10 , wherein the gallium aluminum nitride layer comprises Ga x Al y N z (0<x≦1, 0<y≦1, 0<z≦1).
12. The light emitting device of claim 1 , wherein the gallium oxide substrate comprises a Ga 2 O 3 substrate.
13. A light emitting device comprising:
a gallium oxide substrate;
a gallium aluminum oxide layer over the gallium oxide substrate;
a gallium aluminum nitride layer on the gallium aluminum oxide layer; and
a light emitting structure over the gallium aluminum nitride layer,
wherein the light emitting structure is directly disposed on the gallium aluminum nitride layer, and
wherein the light emitting structure comprises:
a second conductive semiconductor layer over the gallium nitride layer:
an active layer over the second conductive semiconductor layer; and
a first conductive semiconductor layer over the active layer,
wherein the second conductive semiconductor layer is disposed on the gallium nitride layer.
14. The light emitting device of claim 13 , wherein the gallium aluminum oxide layer comprises Ga x Al y O z (0<x≦1, 0<y≦1, 0<z≦1).
15. The light emitting device of claim 13 , wherein the gallium aluminum nitride layer comprises Ga x Al y N z (0<x≦1, 0<y≦1, 0<z≦1).
16. The light emitting device of claim 13 , wherein the gallium oxide substrate comprises a Ga 2 O 3 substrate.