Power Management Module and Method of Manufacture
A power management module, provides an inductor including one or more electrical conductors disposed around a ferromagnetic ceramic element including one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout the ceramic element.
1 . A power management module, comprising:
and inductor including one or more electrical conductors disposed around a ferromagnetic ceramic element including one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout said ceramic element.
2 . The module of claim 1 , wherein said inductor exhibits an inductance anywhere over the range of 0.1 pH to 500 nH.
3 . The module of claim 1 , wherein said one or more metal oxides have a body-centered cubic crystalline phase, that includes iron oxide (Fe 2 O 3 ) and amounts of one or more of: cobalt monoxide (CoO), nickel oxide (NiO), zinc oxide (ZnO), manganese oxide (MnO), copper oxide (CuO), vanadium oxide (VO), magnesium oxide (MgO) and lithium oxide (Li 2 O) The electrical component of claim 42 , wherein one metal oxide of said one or more metal oxides is silicon oxide (SiO 4 ) and said ceramic element adopts a rhombic dodecahedron or rhombic trapezohedron crystalline phase, and the other metal oxides include amounts of one or more of: aluminum oxide (Al 2 O 3 ), iron oxide (Fe 2 O 3 ), chromium oxide (Cr 2 O 3 ), vanadium oxide (V 2 O 3 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), yttrium oxide (Y 2 O 3 ), cobalt oxide (CO 3 O 4 ), gadolinium oxide (Gd 2 O 3 ) neodymium oxide (Nd 2 O 3 ) and holmium oxide (Ho 2 O 3 ).
4 . The module of claim 1 , wherein said one or more additional electrical conductors form a coil around said ceramic element.
5 . The module of claim 1 , wherein said one or more additional electrical conductors include a multiplicity of additional conductors, including one or more second electrical conductors formed as circuit board traces and located beneath said ceramic element.
6 . The module of claim 1 , wherein each of said one or more second electrical conductors are elongated and have contact pads located at opposing ends thereof, and further wherein said multiplicity of additional conductors includes a plurality of electrical contact posts located on said contact pads and adjacent said ceramic element.
7 . The module of claim 1 , wherein said multiplicity of additional conductors includes one or more wire bonds located over said ceramic element and connecting said electrical conductor posts.
8 . The module of claim 1 , wherein said ceramic element includes a plurality of ceramic elements embedded in said dielectric substrate and operatively interconnected.
9 . The module of claim 1 , wherein said inductor is formed on or in a dielectric substrate.
10 . The module of claim 9 , wherein said inductor is part of a system-in-package.
11 . The module of claim 1 , wherein said inductor is formed on a semiconductor substrate.
12 . The module of claim 11 , wherein said inductor is part of a system-on-chip.
13 . The module of claim 11 , wherein said inductor is electrically connected to circuitry within said semiconductor substrate.
14 . The module of claim 1 , further comprising at least one additional electrical component including a second ceramic element including one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout said ceramic element.
15 . The module of claim 12 , wherein said at least one additional electrical component includes a capacitor.
16 . The module of claim 12 wherein said at least one additional electrical component includes a resistor.
17 . A method of manufacturing a power management module, comprising the step of forming an inductor on a semiconductor substrate, including disposing one or more electrical conductors around a ceramic element formed with one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout said ceramic element.