Polysiloxane composition and pattern-forming method
A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.
1. A pattern-forming method comprising:
applying polysiloxane composition on a substrate to be processed to provide a silicon-containing film;
applying a resist composition on the silicon-containing film to provide a resist coating film;
selectively irradiating the resist coating film with a radioactive ray through a photomask to expose the resist coating film;
developing the exposed resist coating film to form a resist pattern; and
sequentially dry etching the silicon-containing film and the substrate to be processed using the resist pattern as a mask,
wherein the polysiloxane composition comprises:
a polysiloxane; and
a first compound comprising:
a nitrogen-containing heterocyclic ring structure; and
a polar group which is an ester group, the ester group bonding to a nitrogen atom of the nitrogen-containing heterocyclic ring structure,
wherein a content of the polysiloxane in the polysiloxane composition is no less than 70% by mass based on a total solid content of the polysiloxane composition, and
wherein the polysiloxane composition does not contain a compound that generates an acid by irradiation with an ultraviolet ray, by heating or a combination thereof.
2. The pattern-forming method according to claim 1 , wherein the first compound further comprises an additional polar group which is different from the ester group.
3. The pattern-forming method according to claim 1 , wherein the first compound comprises an additional polar group which is a hydroxyl group, a carboxyl group or a combination thereof.
4. The pattern-forming method according to claim 1 , wherein the ester group is included in a group represented by formula (i):
wherein, in the formula (i), R 1 , R 2 and R 3 each independently represent an alkyl group having 1 to 4 carbon atoms, or a monovalent alicyclic hydrocarbon group having 4 to 12 carbon atoms, wherein R 1 and R 2 may taken together represent a bivalent alicyclic hydrocarbon group having 4 to 12 carbon atoms together with the carbon atom to which R 1 and R 2 bond; and * denotes a binding site to the nitrogen atom of the nitrogen-containing heterocyclic ring structure.
5. The pattern-forming method according to claim 4 , wherein the first compound is a compound represented by formula (1):
wherein, in the formula (1), R 1 , R 2 and R 3 are as defined in the formula (i); Z represents a group having a valency of (n+2) and representing a heterocyclic ring structure together with a nitrogen atom; A represents a single bond or a bivalent hydrocarbon group having 1 to 8 carbon atoms; R 4 represents a hydroxyl group or a carboxyl group; n is an integer of 1 to 6, wherein in a case in which A are present in a plurality of number, a plurality of As are each a same or different and in a case in which R 4 are present in a plurality of number, a plurality of R 4 s are each a same or different.
6. The pattern-forming method according to claim 1 , wherein the polysiloxane comprises a hydrolytic condensate of a compound represented by formula (S-1):
R 5 a SiX 4-a (S-1)
wherein, in the formula (S-1), R 5 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, an alkenyl group or an aryl group, wherein a part or all of hydrogen atoms included in the alkyl group represented by R 5 are not substituted or substituted by a fluorine atom, a cyano group, a substituted or unsubstituted aryl group, or an alkoxy group having an oxetane ring; X represents a halogen atom or OR A , wherein R A represents a monovalent organic group; and a is an integer of 0 to 3, wherein in a case in which R 5 are present in a plurality of number, a plurality of R 5 s are each a same or different and in a case in which X are present in a plurality of number, a plurality of Xs are each a same or different.
7. The pattern-forming method according to claim 6 , wherein X in the formula (S-1) represents OR A .
8. The pattern-forming method according to claim 1 , wherein a content of the first compound with respect to 100 parts by mass of the polysiloxane is no less than 0.1 parts by mass and no greater than 30 parts by mass.
9. The pattern-forming method according to claim 1 , wherein the polysiloxane composition further comprises water.
10. The pattern-forming method according to claim 9 , wherein a content of the water in the polysiloxane composition is 0.1 to 20% by mass.
11. The pattern-forming method according to claim 1 , wherein the nitrogen-containing heterocyclic ring structure is an aliphatic heterocyclic ring structure, an imidazole structure, a benzimidazole structure, an indole structure, an isoindole structure, a purine structure, a 6-one-purine structure, a pyrazole structure, a pyrrole structure, a pyridine structure, a pyrimidine structure, a pyridazine structure, an indolizine structure, a quinolizine structure, a quinoline structure, an isoquinoline structure, a carbazole structure, an acridine structure, a phenazine structure, or a phenoxazine structure.
12. The pattern-forming method according to claim 1 , wherein the nitrogen-containing heterocyclic ring structure is a piperidine structure, a pyrrolidine structure, an imidazole structure, or a benzoimidazole structure.