Method of manufacturing thick-film electrode

1. A method of manufacturing a thick-film electrode comprising steps of:

(a) applying a conductive paste onto a substrate, the conductive paste comprising,

(i) 100 parts by weight of a conductive powder, wherein the conductive powder is 16 to 49 weight percent based on the weight of the conductive paste;

(ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (Bi), wherein the metal additive is Bi element powder, Bi base alloy powder or a mixture thereof;

(iii) 1 to 25 parts by weight of a glass frit; and

(iv) 50 to 300 parts by weight of an organic medium; and

(b) firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 0.5 to 15 μm.

2. The method of claim 1 , wherein the metal additive comprises Bi at least 60 wt % based on the weight of the metal additive.

3. The method of claim 1 , wherein viscosity of the conductive paste is 10 to 200 Pascal second.

4. The method of claim 1 , wherein particle diameter (D50) of the metal additive is 0.5 to 10 μm.

5. The method of claim 1 , wherein the firing peak temperature in the firing step is 400 to 1000° C.

6. The method of claim 1 , wherein the substrate is made of glass, ceramic, metal or semiconductor.

7. The method of claim 1 , wherein amount of the applied conductive paste per unit area on the substrate is 0.005 to 0.4 g/inch 2 .

8. An electrical device containing the thick-film electrode manufactured by the method of claim 1 .

9. The electrical device of claim 8 is a solar cell.

10. The electrical device of claim 9 , wherein the thick-film electrode is a tab electrode formed on a back side of the solar cell.