SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon.
1 . A semiconductor device comprising:
a semiconductor element having a substrate of one of GaAs, InP, and GaN; and
an element securing member bonded to said semiconductor element by solder and composed of a composite of Cu and carbon.
2 . The semiconductor device according to claim 1 , wherein said composite material is obtained by sintering Cu and carbon fiber.
3 . The semiconductor device according to claim 1 , further comprising a barrier metal layer of Ti or Pt on a surface of said element securing member and an Au layer on a surface of said barrier metal layer, wherein said solder is located between said Au layer and said semiconductor element.
4 . The semiconductor device according to claim 1 , further comprising:
a radiator block connected to said element securing member,
a stem connected to said radiator block, and
a cap secured to said stem and covering said semiconductor element, said
element securing member, and said radiator block.
5 . The semiconductor device according to claim 1 , further comprising a stem connected to said element securing member, and a cap secured to said stem and covering said semiconductor element and said element securing member.
6 . The semiconductor device according to claim 4 , wherein said stem is the same material as said element securing member.
7 . The semiconductor device according to claim 5 , wherein said stem and said element securing member are integral and the same material.
8 . The semiconductor device according to claim 6 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem.
9 . The semiconductor device according to claim 1 , further comprising a frame secured to said element securing member.
10 . A semiconductor device comprising:
a semiconductor element having a substrate of one of GaAs, InP, and GaN; and
an element securing member bonded to said semiconductor element by solder and composed of a composite of Al and carbon.
11 . The semiconductor device according to claim 10 , wherein said composite material is obtained by sintering Al and carbon fiber.
12 . The semiconductor device according to claim 10 , further comprising a barrier metal layer of Ti or Pt on a surface of said element securing member and an Au layer on a surface of said barrier metal layer, wherein said solder is located between said Au layer and said semiconductor element.
13 . The semiconductor device according to claim 10 , further comprising:
a radiator block connected to said element securing member,
a stem connected to said radiator block, and
a cap secured to said stem and covering said semiconductor element, said element securing member, and said radiator block.
14 . The semiconductor device according to claim 10 , further comprising a stem connected to said element securing member, and a cap secured to said stem and covering said semiconductor element and said element securing member.
15 . The semiconductor device according to claim 13 , wherein said stem is the same material as said element securing member.
16 . The semiconductor device according to claim 14 , wherein said stem and said element securing member are integral and the same material.
17 . The semiconductor device according to claim 15 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem.
18 . The semiconductor device according to claim 10 , further comprising a frame secured to said element securing member.