SOLID-STATE IMAGE SENSING DEVICE
A solid-state image sensing device is configured such that a first voltage is applied to a first conductivity type semiconductor region and a second voltage is applied to source-drain regions having a second conductivity type of the MOS capacitance to apply inverse bias between the semiconductor region and the source-drain regions of the MOS capacitance.
1 . A solid-state image sensing device, comprising:
a P type semiconductor region;
an N type photodiode formed in the semiconductor region; and
a pixel including an N type floating diffusion accumulating electrons generated by the photodiode and enhancement type MOS capacitance which is additional capacitance of the floating diffusion,
wherein the MOS capacitance shows a saturation characteristic in a range of operating voltage of the solid-state image sensing device, and
ground voltage is applied to the semiconductor region.
2 . The solid-state image sensing device according to claim 1 , wherein the ground voltage is applied to source-drain regions having a P type of the MOS capacitance.
3 . The solid-state image sensing device according to claim 1 , wherein the source-drain regions having the P type of the MOB capacitance are floated.
4 . A solid-state image sensing device, comprising:
a first conductivity type semiconductor region;
a second conductivity type photodiode formed in the semiconductor region; and
a pixel including a second conductivity type floating diffusion accumulating electrons generated by the photodiode and depression type MOS capacitance which is additional capacitance of the floating diffusion,
wherein first voltage is applied to the semiconductor region and second voltage is applied to source-drain regions having a second conductivity type of the MOS capacitance to apply inverse bias between the semiconductor region and the source-drain regions of the MOS capacitance.
5 . The solid-state image sensing device according to claim 4 ,
wherein the first conductivity type is a P type and the second conductivity type is an N type, and
wherein operating voltage of the solid-state image sensing device is applied as the first voltage and ground voltage of the solid-state image sensing device is applied as the second voltage.
6 . The solid-state image sensing device according to claim 4 ,
wherein the first conductivity type is the N type and the second conductivity type is the P type, and
wherein the ground voltage of the solid-state image sensing device is applied as the first voltage and the operating voltage of the solid-state image sensing device is applied as the second voltage.