Plasma processing apparatus and plasma processing method
View Patent ↗A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
1. A plasma processing apparatus comprising:
a processing chamber which plasma-processes a sample;
a first high-frequency power supply which supplies first high-frequency power at a first high-frequency for plasma generation to the processing chamber;
a second high-frequency power supply which supplies second high-frequency power at a second high-frequency to a sample stage on which the sample is placed; and
a pulse generation device which generates a first pulse to modulate the first high-frequency power, and a second pulse to modulate the second high-frequency power, the pulse generation device including a control device configured to:
control a frequency of repetition of the first pulse and a frequency of repetition of the second pulse so that the frequency of repetition of the first pulse is higher than the frequency of repetition of the second pulse, and
control the frequency of repetition of the first pulse, a ratio of an on-period of the first pulse to a period of a cycle of the first pulse, the frequency of repetition of the second pulse, and a ratio of an on-period of the second pulse to a period of a cycle of the second pulse so that the on-period of the second pulse is contained in the on-period of the first pulse.
2. The plasma processing apparatus according to claim 1 , wherein
the frequency of the first pulse is a frequency at which afterglow discharge can be maintained.
3. The plasma processing apparatus according to claim 1 , wherein
the pulse generation device monitors a peak-to-peak voltage Vpp of a high-frequency voltage applied to the sample stage from the second high-frequency power supply and, when the monitored Vpp is higher than a predetermined value, is configured to increase the frequency of the first pulse so that the monitored Vpp is lower than the predetermined value.
4. The plasma processing apparatus according to claim 1 , wherein
the on-period of the second pulse is shorter than the on-period of the first pulse.
5. The plasma processing apparatus according to claim 4 , wherein
the on-period of the second pulse is delayed as compared with the on-time of the first pulse.
6. A plasma processing method of plasma-processing a sample using a plasma processing apparatus which includes a processing chamber to plasma-process the sample, a first high-frequency power supply configured to supply a first high-frequency power at a first high-frequency for plasma generation to the processing chamber, a second high-frequency power supply configured to supply a second high-frequency power at a second high-frequency to a sample stage on which the sample is placed and a pulse generation device configured to generate a first pulse to modulate the first high-frequency power and a second pulse to modulate the second high-frequency power, the method comprising the step of:
while the second high-frequency power, modulated by the second pulse, is supplied to the sample stage, plasma-processing the sample using the plasma generated by the first high-frequency power, which is modulated by the first pulse,
wherein
a frequency of repetition of the first pulse is higher than a frequency of repetition of the second pulse, and
an on-period of the second pulse is made to be contained in an on-period of the first pulse.
7. The plasma processing method according to claim 6 , wherein
the frequency of the first pulse is a frequency at which afterglow discharge can be maintained.
8. The plasma processing method according to claim 6 , wherein
the on-period of the second pulse is shorter than the on-period of the first pulse.
9. The plasma processing method according to claim 8 , wherein
the on-period of the second pulse is delayed as compared with the on-time of the first pulse.
10. The plasma processing method according to claim 6 , further comprising:
monitoring a peak-to-peak voltage Vpp of a high-frequency voltage applied to the sample stage from the second high-frequency power supply; and
when the monitored Vpp is higher than a predetermined value, increasing the frequency of the first pulse so that the monitored Vpp is lower than the predetermined value.