Dynamic switch scaling for switched-mode power converters
Techniques for optimizing the trade-off between minimizing switching losses and minimizing conduction losses in a buck converter. In an aspect, each of a high-side switch and a low-side switch may be implemented as a plurality of parallel-coupled transistors, each transistor having an independently controllable gate voltage, allowing adjustment of the effective transistor size. In response to the target voltage of the buck converter corresponding to a relatively high voltage range, more high-side switch transistors and fewer low-side switch transistors may be selected. Similarly, in response to the target voltage corresponding to a relatively low voltage range, more low-side switch transistors and fewer high-side switch transistors may be selected. In an aspect, the techniques may be applied during a pulse-frequency modulation mode.
1. An apparatus, comprising:
a high-side switch coupling a source voltage to an inductor, wherein the inductor is further coupled to an output voltage, and wherein a size of the high-side switch is adjustable;
a low-side switch coupling the inductor to ground, wherein a size of the low-side switch is adjustable; and
a control logic block,
wherein a driving capability of at least one of the high-side switch and the low-side switch is adjusted based on a target output voltage to which the output voltage is driven,
wherein the driving capability of at least one of the high-side switch and the low-side switch corresponds to the size of said at least one of the high-side switch and the low-side switch,
wherein the size of the high-side switch is adjustable by selectively enabling a plurality of parallel-coupled PMOS transistors, and the size of the low-side switch is adjustable by selectively enabling a plurality of parallel-coupled NMOS transistors,
wherein the control logic block is configured to generate a plurality of gate control voltages for controlling each of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors, and
wherein the high-side switch is adjustable, in response to the target output voltage being increased, by increasing a quantity of the plurality of parallel-coupled PMOS transistors that are selectively enabled, and wherein the low-side switch is adjustable, in response to the target output voltage being decreased, by increasing a quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.
2. The apparatus of claim 1 , wherein the driving capability of at least one of the high-side switch and the low-side switch corresponds to a magnitude of a driving voltage of said at least one of the high-side switch and the low-side switch.
3. The apparatus of claim 1 , wherein the sizes of both the high-side switch and the low-side switch are adjusted based on the target output voltage to which the output voltage is driven.
4. The apparatus of claim 1 , wherein the high-side and low-side switches are configured to operate according to pulse frequency modulation (PFM), wherein the size of the high-side switch is increased in response to the target output voltage being in a high voltage range, and wherein the size of the high-side switch is decreased in response to the target output voltage being in a low voltage range lower than the high voltage range.
5. The apparatus of claim 1 , wherein the size of the low-side switch is increased in response to the target output voltage being in a low voltage range, and the size of the low-side switch is decreased in response to the target output voltage being in a high voltage range higher than the low voltage range.
6. The apparatus of claim 1 , wherein the control logic block comprises a decode table storing a mapping between each of a plurality of voltage ranges and corresponding gate control voltages specifying a size for each of the plurality of parallel-coupled PMOS transistors, wherein the decode table further stores a mapping between each of the plurality of voltage ranges and corresponding gate control voltages specifying a size for each of the plurality of parallel-coupled NMOS transistors.
7. The apparatus of claim 1 , wherein the size of the high-side switch is increased in response to the target output voltage being in a higher voltage range, and the size of the high-side switch is decreased in response to the target output voltage being in a lower voltage range.
8. The apparatus of claim 1 , wherein the size of the at least one of the high-side switch and the low-side switch is adjusted based on the target output voltage during a low-current mode of the apparatus.
9. The apparatus of claim 8 , wherein the low-current mode of the apparatus corresponds to operation of a buck converter in a pulse-frequency modulation mode.
10. A method comprising:
providing a high-side switch coupling a source voltage to an inductor, wherein the inductor is further coupled to an output voltage, and wherein a size of the high-side switch is adjustable;
providing a low-side switch coupling the inductor to ground, wherein a size of the low-side switch is adjustable; and
generating, with a control logic block, a plurality of gate control voltages,
wherein a driving capability of at least one of the high-side switch and the low-side switch is adjusted based on a target output voltage to which the output voltage is driven,
wherein the driving capability of at least one of the high-side switch and the low-side switch corresponds to the size of said at least one of the high-side switch and the low-side switch,
wherein the size of the high-side switch is adjustable by selectively enabling a plurality of parallel-coupled PMOS transistors, and the size of the low-side switch is adjustable by selectively enabling a plurality of parallel-coupled NMOS transistors,
wherein the plurality of gate control voltages control each of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors, and
wherein the high-side switch is adjustable, in response to the target output voltage being increased, by increasing a quantity of the plurality of parallel-coupled PMOS transistors that are selectively enabled, and wherein the low-side switch is adjustable, in response to the target output voltage being decreased, by increasing a quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.
11. The method of claim 10 , wherein the driving capability of at least one of the high-side switch and the low-side switch corresponds to a magnitude of a driving voltage of the at least one of the high-side switch and the low-side switch.
12. The method of claim 10 , wherein the low-current mode corresponds to a pulse-frequency modulation mode of operation in a buck converter, the method further comprising:
increasing the size of the low-side switch in response to the target output voltage being in a low voltage range; and
decreasing the size of the of the low-side switch in response to the target output voltage being in a high voltage range higher than the low voltage range.
13. The method of claim 10 , further comprising:
using the control logic block, mapping the target output voltage to the driving capability for the high-side or low-side switch.
14. The method of claim 13 , wherein the mapping comprises classifying the target output voltage into a voltage range associated with a size for the high-side or low-side switch.
15. An apparatus comprising:
a high-side switch means for coupling a source voltage to an inductor, wherein the inductor is further coupled to an output voltage, and wherein a size of the high-side switch means is adjustable;
a low-side switch means for coupling the inductor to ground, wherein a size of the low-side switch means is adjustable; and
a control logic means for adjusting a plurality of gate control voltages,
wherein a driving capability of at least one of the high-side switch means and the low-side switch means is adjusted based on a target output voltage to which the output voltage is driven,
wherein the driving capability of at least one of the high-side switch means and the low-side switch means corresponds to the size of said at least one of the high-side switch means and the low-side switch means,
wherein the size of the high-side switch means is adjustable by selectively enabling a plurality of parallel-coupled PMOS transistors, and the size of the low-side switch means is adjustable by selectively enabling a plurality of parallel-coupled NMOS transistors,
wherein the plurality of gate control voltages control each of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors, and
wherein the high-side switch means is adjustable, in response to the target output voltage being increased, by increasing a quantity of the plurality of parallel-coupled PMOS transistors that are selectively enabled, and wherein the low-side switch means is adjustable, in response to the target output voltage being decreased, by increasing a quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.
16. The apparatus of claim 15 , wherein the driving capability of at least one of the high-side switch means and the low-side switch means corresponds to a magnitude of a driving voltage of said at least one of the high-side switch means and the low-side switch means.
17. The apparatus of claim 15 , wherein the sizes of both the high-side switch means and the low-side switch means are adjusted based on the target output voltage to which the output voltage is driven.
18. The apparatus of claim 15 , wherein the high-side switch means and the low-side switch means are configured to operate according to pulse frequency modulation (PFM), wherein the size of the high-side switch means is increased in response to the target output voltage being in a high voltage range, and wherein the size of the high-side switch means is decreased in response to the target output voltage being in a low voltage range lower than the high voltage range.
19. The apparatus of claim 15 , wherein the size of the low-side switch means is increased in response to the target output voltage being in a low voltage range, and the size of the low-side switch means is decreased in response to the target output voltage being in a high voltage range higher than the low voltage range.
20. The apparatus of claim 15 , wherein the control logic means comprises a decode table storing a mapping between each of a plurality of voltage ranges and corresponding gate control voltages specifying a size for each of the plurality of parallel-coupled PMOS transistors, wherein the decode table further stores a mapping between each of the plurality of voltage ranges and corresponding gate control voltages specifying a size for each of the plurality of parallel-coupled NMOS transistors.