Integration of optical proximity correction and mask data preparation
View Patent ↗Aspects of the invention relate to techniques for integrating optical proximity correction and mask data preparation. First mask writer instructions for a layout design are simulated to generate a mask contour. Based on the generated mask contour, first layout data for the layout design are adjusted for optical proximity correction to generate second layout data. Using the generated second layout data as mask target, the first mask writer instructions are adjusted to generate second mask writer instructions. The above process may be iterated until an end condition is met.
1. One or more non-transitory computer-readable media storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:
simulating first mask writer instructions for a layout design to generate a mask contour, the layout design representing at least a portion of an integrated circuit design, the mask contour being a contour that is predicted to be printed on the mask surface;
adjusting first layout data for the layout design for optical proximity correction base on the mask contour to generate second layout data; and
adjusting the first mask writer instructions based on the second layout data to generate second mask writer instructions.
2. The one or more non-transitory computer-readable media recited in claim 1 , wherein the method further comprises:
iterating the operations of simulating, adjusting first layout data and adjusting the first mask writer instructions until an end condition is met.
3. The one or more non-transitory computer-readable media recited in claim 2 , wherein the end condition comprises a condition that both the layout data adjustment and the mask writer instructions adjustment are converged.
4. The one or more non-transitory computer-readable media recited in claim 1 , wherein the operation of adjusting first layout data is one iteration of an optical proximity correction process.
5. The one or more non-transitory computer-readable media recited in claim 4 , wherein the optical proximity correction process is based on inverse lithography.
6. The one or more non-transitory computer-readable media recited in claim 1 , wherein the operation of adjusting the first mask writer instructions is one iteration of a model-based mask data preparation process.
7. The one or more non-transitory computer-readable media recited in claim 1 , wherein the first mask writer instructions are generated by a global operation of a model-based mask data preparation process.
8. The one or more non-transitory computer-readable media recited in claim 1 , wherein the first layout data are generated by a global operation of an optical proximity process.
9. A method, comprising:
with a computer,
simulating first mask writer instructions for a layout design to generate a mask contour, the layout design representing at least a portion of an integrated circuit design, the mask contour being a contour that is predicted to be printed on the mask surface;
adjusting first layout data for the layout design for optical proximity correction base on the mask contour to generate second layout data; and
adjusting the first mask writer instructions based on the second layout data to generate second mask writer instructions.
10. The method recited in claim 9 , further comprising:
iterating the operations of simulating, adjusting first layout data and adjusting the first mask writer instructions until an end condition is met.
11. The method recited in claim 10 , wherein the end condition comprises a condition that both the layout data adjustment and the mask writer instructions adjustment are converged.
12. The method recited in claim 9 , wherein the operation of adjusting first layout data is one iteration of an optical proximity correction process.
13. The method recited in claim 12 , wherein the optical proximity correction process is based on inverse lithography.
14. The method recited in claim 9 , wherein the operation of adjusting the first mask writer instructions is one iteration of a model-based mask data preparation process.
15. The method recited in claim 9 , wherein the first mask writer instructions are generated by a global operation of a model-based mask data preparation process.
16. The method recited in claim 9 , wherein the first mask writer instructions are generated by a global operation of a model-based mask data preparation process.
17. A system comprising:
one or more processors, the one or more processors programmed to perform a method, the method comprising:
simulating first mask writer instructions for a layout design to generate a mask contour, the layout design representing at least a portion of an integrated circuit design, the mask contour being a contour that is predicted to be printed on the mask surface;
adjusting first layout data for the layout design for optical proximity correction base on the mask contour to generate second layout data; and
adjusting the first mask writer instructions based on the second layout data to generate second mask writer instructions.
18. The system recited in claim 17 , wherein the method further comprises:
iterating the operations of simulating, adjusting first layout data and adjusting the first mask writer instructions until an end condition is met.
19. The system recited in claim 17 , wherein the operation of adjusting first layout data is one iteration of an optical proximity correction process.
20. The system recited in claim 17 , wherein the optical proximity correction process is based on inverse lithography.